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Good quality Electronic Component provider from China——GS Electronics, BC817-40 - Product Details Introduction: The BC817-40 is a general-purpose NPN bipolar junction transistor ...
Guangdong, china
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Product:General Electric DS200IIBDG1AEA DS200IIBDG1A GE Insulated Gate Bipolar Transistor Board The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A contains nine ...
Fujian, china
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Product Description: High Power IGBT is a type of high power bipolar transistor, specifically a type of insulated-gate bipolar transistor (IGBT). It is an advanced semiconductor ...
Guangdong, china
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Benchtop Treadle Switch Bipolar Transistor Welder For Lithium-Ion Batteries Equipment introduction ● Adopting self-developed precision welding head, the pressure adjustment control ...
Guangdong, china
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Aviation Parts 2N2907A Bipolar Transistors Collector- Emitter Voltage 60 V Descriptions of Aviation Parts: The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in ...
Shaanxi, china
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LTV-356T-D Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver Product: LTV-356T-D Power Isolator IC Features: • Maximum working voltage: 50V • ...
china
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Product Description ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and ...
china
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Discrete Semiconductors JANTX2N2369A TO-18-3 Bipolar Transistors Product Description: Microchip High-Reliability Discrete (HRDS) Products come in various packaging and quality ...
china
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Product Description ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and ...
china
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IKWH50N65WR6XKSA1 IGBT Transistors HOME APPLIANCES 14 Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs are ...
china
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APT50GT60BRDQ2G IGBT Power Module Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current ...
china
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G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides ...
Guangdong, china
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2N3792 Bipolar Transistors BJT Power BJT Trans GP BJT PNP 80V 10A 5000mW 3-Pin(2+Tab) TO-3 Tray Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole ...
china
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Product Description Product Category: Bipolar Transistors - BJT RoHS: RoHS Compliant Details Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: NPN ...
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NJW0302G Complementary NPN-PNP Power Bipolar Transistors 15A 250V 150W NJW0281G 250V 15A 150W hfe75-150 and NJW0302G 250V 15A 150W hfe75-150 are pair. 15 AMPERES COMPLEMENTARY ...
Guangdong, china
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Quick Detail: MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS Description: Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 ...
china
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Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 12 A @ 90°C 20 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED ...
china
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PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD ...
Guangdong, china
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5pcsTO247 50JR22 TO247 N CHANNEL IGBT transistor GT50JR22 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px...
china
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PBHV8540X PBHV8540 Nexperia Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor Discrete Semiconductor Products-A NPN high-voltage low VCEsat ...
HongKong, china
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