Results forb2002fr cm l06 rf 110dbfrom 1649 Products.
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Technical Parameters: Output 110V/60Hz OR 220V/50Hz Power consumption 180W RF Frequency 1-4.68 MHZ Micro Needle 10 needles/25 needles/64 needles/Nano needle Max cooling temperature ...
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Portable IPL RF Diode Laser Hair Removal Machine Skin Tightening Technical parameters Model E-M22 Range of Spectrum 480,530,640-1200nm Optional 480nm 530nm 590nm 640nm 690nm RF ...
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COWEROAY Professional No-Needle Ems Face Lifting Skin Tightening RF Massage Machine RF Ems PE-FACE Face Lifting Devices Parameter Operating handle 3 Patchs Power 100-220V50/60Hz Electromagnetic wave energy 0-3T RF ...
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices Overview Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high...
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Product Description: The Radio Frequency Machine is a state-of-the-art device that offers advanced skin tightening and wrinkle reduction treatments. It is designed with rf ...
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Rohde and Schwarz CMS54 Radiocommunication Service Monitor CMS Multifuctional Instruments Description of R&S CMS54 Analyzer Analog Test Set 400KHz to 1GHz, Digital Oscilloscope, ...
china
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Product Features shielding ED copper foil thickness 0.009--3mm, width 10-1380mm easier to make a faraday cage, EMI room generally 400-500kg/roll Physical Properties Density:8.9g/cm...
china
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RF Transmitter Antenna 14-SOIC (0.154", 3.90mm Width)
china
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2023 Hot Sell RF EMS Muscle Sculpt Slimming Machine Rf Trusculpt For Face Lift Muscle Sculpt Slimming Machine Specification: Product Name Tru sculpt slimming machine Technology ...
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CC113LRGPR CC113LRGPT Electronic Integrated Circuits RF Receiver QFN CC113L Value Line Receiver MORE STOCK P/N BRAND QTY P/N BRAND QTY P/N BRAND QTY L6566BH ST 2000 TJA1051TK/3,118 ...
china
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China intense pulsed light Lescolton Depilador OPT Elight Laser IPL Hair Removal SHR RF Skin Rejuvenation Anti Pigment Freckle Two corlor optional Blue and gordern Technical ...
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10*10.5mm2 C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview We sell directly from the factory, and therefore can ...
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Product Features shielding ED copper foil thickness 0.009--3mm, width 10-1380mm easier to make a faraday cage, EMI room generally 400-500kg/roll Physical Properties Density:8.9g/cm...
china
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RF Transmitter Antenna 14-SOIC (0.154", 3.90mm Width)
china
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Portable IPL RF Diode Laser Hair Removal Machine Skin Tightening Technical parameters Model E-M22 Range of Spectrum 480,530,640-1200nm Optional 480nm 530nm 590nm 640nm 690nm RF ...
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5*10mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
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5*10mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
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5*10mm2 SP-face (10-11) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Now a new material called Gallium Nitride (GaN) has the ...
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5*10mm2 SP-face (11-12) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview The GaN semiconductor device market includes ...
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be ...
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