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MMBT2907ALT1G Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 300 mW

SZ ADE Electronics Co., Ltd

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MMBT2907ALT1G Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 300 mW

Country/Region china
City & Province shenzhen guangdong
Categories Optoelectronic Displays
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Product Details

MMBT2907ALT1G Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 300 mW


Specifications of MMBT2907ALT1G

 

TYPEDESCRIPTION
CategoryDiscrete Semiconductor Products
 Transistors
 Bipolar (BJT)
 Single Bipolar Transistors
Mfronsemi
Series-
PackageTape & Reel (TR)
 Cut Tape (CT)
Transistor TypePNP
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Power - Max300 mW
Frequency - Transition200MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Base Product NumberMMBT2907

 
Features of MMBT2907ALT1G


• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements;

  AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
 
Applications of MMBT2907ALT1G


2F = Device Code
M = Date Code*
* Date Code orientation and/or overbar may
vary depending upon manufacturing location.
 
Environmental & Export Classifications of 
MMBT2907ALT1G
 

ATTRIBUTEDESCRIPTION
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.21.0075

 

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