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M29W160EB70N3F FLASH - NOR Memory IC 16Mbit Parallel 70 ns 48-TSOP
Specifications of M29W160EB70N3F
| TYPE | DESCRIPTION |
| Category | Integrated Circuits (ICs) |
| Memory | |
| Memory | |
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Tape & Reel (TR) |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 16Mbit |
| Memory Organization | 2M x 8, 1M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 70ns |
| Access Time | 70 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP |
| Base Product Number | M29W160 |
Applications of M29W160EB70N3F
The M29W160ET/B (2Mb x8 or 1Mb x16) is a nonvolatile device that
can be read, erased and reprogrammed. These operations can be
performed using a single low voltage (2.7–3.6V) supply. On power-up
the memory defaults to read mode where it can be read in the same
way as a ROM or EPROM.
Environmental & Export Classifications of M29W160EB70N3F
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0071 |
