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BC858CDXV6T1G BJT Bipolar Transistor Array 2 PNP (Dual) 30V 100mA 100MHz 500mW

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BC858CDXV6T1G BJT Bipolar Transistor Array 2 PNP (Dual) 30V 100mA 100MHz 500mW

Country/Region china
City & Province shenzhen guangdong
Categories Electronic Products & Components Processing
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Product Details

BC858CDXV6T1G Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 100mA 100MHz 500mW​

 

Specifications of BC858CDXV6T1G

 

TYPEDESCRIPTION
CategoryDiscrete Semiconductor Products
 Transistors
 Bipolar (BJT)
 Bipolar Transistor Arrays
Mfronsemi
Series-
PackageTape & Reel (TR)
 Cut Tape (CT)
Transistor Type2 PNP (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)30V
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA, 5V
Power - Max500mW
Frequency - Transition100MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563
Base Product NumberBC858

 
Features of BC858CDXV6T1G

 

These are Pb−Free Devices

 

 

 

Environmental & Export Classifications of BC858CDXV6T1G

 

ATTRIBUTEDESCRIPTION
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.21.0075

 

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