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8205a mosfet power transistor

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Mosfet Power Transistor IXFH160N15T2 160A 150V 880W N-Channel TrenchT2 Description DC charging stations are designed to convert the electrical grid’s AC power into DC power that ...
Guangdong, china
Verified
IRFB4620PBF MOSFET Power Transistor High Performance Reliable Power Switching Features: • 200V Drain-Source Voltage (VDS) • 8.9A Continuous Drain Current (ID) at 25°C • 12.3A ...
china
Verified
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low ...
china
Verified
IRF5210PBF P-Channel 100V 40A 200W TO-220 DIP Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ...
Guangdong, china
Member
Introducing the FQPF18N60C - The Ultimate Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications ...
china
Verified
Mosfet Power Transistor TPH2R306NH1,LQ Toshiba Automotive 190A 60V 1.9 MOhms U-MOS Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers ...
Guangdong, china
Verified
IRFB3806PBF MOSFET Power Transistor High Voltage High Current Switching Device Parameters: • Drain-Source Voltage (Vdss): 100V • Current - Continuous Drain (Id) @ 25°C: 66A • Rds ...
china
Verified
General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are ...
china
Verified
2SC5589 Toshiba Mosfet Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized ...
Guangdong, china
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IRFR3410TRPBF MOSFET Power Transistor High-Performance Low On-Resistance for Maximum Efficiency Product Parameters: • Drain-Source Voltage: 60V • Gate-Source Voltage: ±20V • ...
china
Verified
General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are ...
china
Verified
Darlington Bipolar Mosfet Power Transistor TIP142 for amplifier and switching applications TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are ...
Guangdong, china
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IRLR2905ZTRPBF MOSFET Power Transistor High Performance Low On Resistance Fast Switching Features: • Logic Level Gate Drive, 4.5V to 20V • Low On-Resistance RDS(on) • 100% UIL ...
china
Verified
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low ...
china
Verified
Product Description: This is an N-Channel MOSFET manufactured by International Rectifier. It is a power MOSFET with a maximum drain source voltage of 100V and a maximum drain ...
china
Verified
HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
china
Verified
Product Listing: Product Name: IRFP240PBF MOSFET Description: This MOSFET is designed to withstand high levels of current and drain-source voltage. It is ideal for use in high...
china
Verified
HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
china
Verified
HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
china
Verified
HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
china
Verified
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