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279um silicon epitaxial wafer

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2inch Green-LED GaN on silicon wafer Overview Gallium Nitride is a semiconductor technology used for high power, high-frequency semiconductor applications. Gallium Nitride exhibits ...
Shanghai, china
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AlN on Diamond template wafers AlN epitaxial films on Diamond substrate AlN on Sapphire /AlN-on-SiC/ AlN-ON Silicon Aluminum nitride (AlN) is one of the few non-metallic materials ...
Shanghai, china
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Saw blade with diamond plated If you’re searching for the right dicing blades, we recommend our HT-RE electroformed bond blades. They are a high performance and high quality wafer ...
Henan, china
Member
AlN on Diamond template wafers AlN epitaxial films on Diamond substrate AlN on Sapphire /AlN-on-SiC/ AlN-ON Silicon Welcome to Know AlN Template on Diamond~~ Advantages of AlN • ...
Shanghai, china
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Surface Mount Plastic SOT-23 Package Silicon Planar Zener Diodes This series of Zener diodes is offered in the convenient, surface mount plastic SOT-23 package. These devices are ...
Guangdong, china
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5*10mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
Shanghai, china
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Saw blade with diamond plated If you’re searching for the right dicing blades, we recommend our HT-RE electroformed bond blades. They are a high performance and high quality wafer ...
Henan, china
Member
VGF 2 Inch 4Inch N Type P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth Gallium arsenide can ...
Shanghai, china
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5*10mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
Shanghai, china
Verified
Saw blade with diamond plated If you’re searching for the right dicing blades, we recommend our HT-RE electroformed bond blades. They are a high performance and high quality wafer ...
Henan, china
Verified
VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth GaAs wafer (Gallium Arsenide) is an advantageous alternative to silicon that has been evolving in the ...
Shanghai, china
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4inch GaN-On-Sapphire Blue/Green LED Wafer Flat Sapphire 100 ± 0.2 mm 4 inch Blue LED GaN epitaxial wafer on sapphire SSP The key ingredient for blue LEDs is gallium nitride, a ...
Shanghai, china
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Saw blade with diamond plated If you’re searching for the right dicing blades, we recommend our HT-RE electroformed bond blades. They are a high performance and high quality wafer ...
Henan, china
Verified
2inch Green-LED GaN on silicon wafer Overview Gallium nitride (GaN) is creating an innovative shift throughout the power electronics world. For decades, silicon-based MOSFETs ...
Shanghai, china
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2inch Green-LED GaN on silicon wafer Overview Gallium nitride (GaN) is creating an innovative shift throughout the power electronics world. For decades, silicon-based MOSFETs ...
Shanghai, china
Verified
M Face Free-Standing GaN Substrates Front Surface Roughness < 0.2 Nm (Polished) Or < 0.3 nm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity ...
Shanghai, china
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6inch 4H-SiC substrate N-Type P-MOS Grade 350.0±25.0μm MPD≤0.2/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC is used for the fabrication of very ...
Shanghai, china
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JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and microwave devices Overview The unique electronic and thermal properties of silicon carbide ...
Shanghai, china
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Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm ...
Shanghai, china
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50.8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) ± 0.5o, 16 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm ...
Shanghai, china
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