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200v silicon power transistor

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13P10D -100V Mosfet Power Transistor For Power Management ESD Protested DESCRIPTION The 13P10D uses advanced trench technology and design to provide excellent RDS(ON) with low gat ...
Guangdong, china
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Product Listing: SI4355-B1A-FMR RF Power Transistor Features: • High Power Output • Low Noise Figure • High Efficiency • Broadband Operation • Low Distortion • High Reliability • ...
china
Verified
BD681 NPN DarliCM GROUPon Power Transistors Medium Power Switching ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ MONOLITHIC DARLICM GROUPON CONFIGURATION ■ ...
china
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Quick Detail: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Description: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz Applications: · Low Noise - 2.5 ...
china
Verified
Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance ...
Guangdong, china
Member
13P10D -100V Mosfet Power Transistor For Power Management ESD Protested DESCRIPTION The 13P10D uses advanced trench technology and design to provide excellent RDS(ON) with low gat ...
Guangdong, china
Verified
SI4010-C2-GTR RF Power Transistor Product Features: • 900 MHz to 2.7 GHz Frequency Range • 10 W Output Power at 2.4 GHz • 30 V Nominal Drain Voltage • 6.8 dB Typical Gain at 2.4 ...
china
Verified
Mosfet Power Transistor STL26N60DM6 MOSFET N-channel 600 V, 175 mOhm typ HV package Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery ...
Guangdong, china
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G420ND06LR1S Mosfet Power Transistor For Battery Protection 60V/5A Feature Description 60V/5A R DS(ON) = 40 mΩ(typ.)@V GS = 10V R DS(ON) = 48 mΩ(typ.)@V GS = 4.5V  100% Avalanche ...
Guangdong, china
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Product Listing: SI4421-A1-FTR Parameters: • Type: RF Power Transistor • Technology: GaN • Package Type: SMD • Operating Voltage: 40V • Operating Frequency: 0.5 - 3 GHz • Output ...
china
Verified
Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance ...
Guangdong, china
Verified
AP50N10D Dual Mosfet Switch / 50A 100V TO-252 High Power Transistor Dual Mosfet Switch applications Switch Mode Power Supplies (SMPS) Residential, commercial, architectural and ...
Guangdong, china
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SI1000-E-GM2R RF Power Transistor Features: • 500-1000 MHz Operating Frequency Range • 28V Operating Voltage • 10W Output Power • 6 dB Gain • High Efficiency • Low Noise • Low ...
china
Verified
6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
Guangdong, china
Member
HMC8038LP4CETR RF Power Transistor Specifications: • Frequency Range: DC - 6GHz • Maximum Power Output: 28dBm • Gain: 15.5dB • Supply Voltage: 3.5V • Operating Temperature: -55°C ...
china
Verified
Product Listing: ADL5602ARKZ-R7 RF Power Transistor Features: • High Output Power: >35 dBm • High Efficiency: >50% • Wide Bandwidth: 5.5 to 6.5 GHz • Low Cost • Low-Noise • Low...
china
Verified
Product Listing Product: ADF7021BCPZ-RL RF Power Transistors Features: • Low Current Consumption • High Linearity • Low Noise • High Gain • High Output Power • Wide Operating ...
china
Verified
HMC544AE RF Power Transistor Features: - High Output Power: 28 dBm Typical - High Gain: 14 dB Typical - Low Noise Figure: 2 dB Typical - Excellent Linearity - Wide Bandwidth: 600 ...
china
Verified
Product Listing: Product: AD8342ACPZ-REEL7 RF Power Transistors Package: Reel Configuration: Single Operating Frequency Range: DC - 6GHz Gain: 17 dB Noise Figure: 1.7 dB Power ...
china
Verified
HMC915LP4ETR RF Power Transistor - High Performance High Efficiency Product Specifications: - Frequency Range: 9-10GHz - Power Gain: 13 dB - Output Power: 23 dBm - Supply Voltage: ...
china
Verified
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