Results for200mm sic substrate waferfrom 1175 Products.
|
|
N Type , Si-Doped GaAs(Gallium Arsenide) Substrate , 3”, Dummy Grade PAM-XIAMEN Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer. We ...
|
|
|
|
|
2 Inch Silicon Wafer FZ P Type Boron Doped Orientation 100 Prime Grade 2" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
|
|
|
|
|
3 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 3" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
|
|
|
|
|
3 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 3" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
|
|
|
|
|
4 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 4" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
|
|
|
|
|
8 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 111 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
|
|
|
|
|
8 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 111 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
|
|
|
|
|
12 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 12" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
|
|
|
|
|
8 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 100 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
|
|
|
|
|
8 Inch Silicon Wafer FZ Intrinsic Undoped Orientation 100 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
|
|
|
|
|
12 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 111 Prime Grade 12" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
|
|
|
|
|
4 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 111 Prime Grade 4" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
|
|
|
|
|
3 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 100 Prime Grade 3" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
|
|
|
|
|
2 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 111 Prime Grade 2" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
|
|
|
|
|
12" Dummy Grade / Mechanical Grade Silicon Wafer DSP Thickness 650-700/700-750/750μm No Scratch Films Etch Patterns PAM-XIAMEN develops advanced crystal growth and epitaxy ...
|
|
|
|
|
6 Inch Silicon Wafer CZ N Type Antimony Doped Orientation 100 Ultra Thickness 290±20um Prime 6" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the ...
|
|
|
|
|
8 Inch Silicon Wafer CZ P Type Phosphorus Doped Orientation 100 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
|
|
|
|
|
6 Inch CZ Prime Silicon Wafer With One Side Sputtering Cr / Au Layer Thickness 10nm/50nm 6" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the ...
|
|
|
|
|
6 Inch Silicon Wafer CZ P Type Boron Doped Orientation 111 Prime Grade 6" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
|
|
|
|
|
6 Inch Silicon Wafer CZ P Type Boron Doped Orientation 100 Prime Grade 6" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
|
|
|
