Results for160v silicon power transistorfrom 21891 Products.
|
|
BTA40, BTA41 and BTB41 Series 40A TRIACS Main Features Symbol Value Unit IT(RMS) 40 A VDRM/VRRM 600 and 800 V IGT (Q1) 50 mA DESCRIPTION Available in high power packages, the BTA/ ...
china
|
|
|
|
|
IRF3205PBF Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced ...
|
|
|
|
|
HMC788ALP2ETR, RF Power Transistor Description: The HMC788ALP2ETR is a GaN on Silicon Carbide (SiC) RF power transistor that is designed for use in high power, wideband communicati...
china
|
|
|
|
|
TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if ...
china
|
|
|
|
|
Product Description: Silicon Carbide MOSFETs, also known as Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) based on Silicon Carbide, are high-power, high-efficiency ...
|
|
|
|
|
FGL40N120AND 1200V NPT IGBT Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance • CO-PAK, IGBT with FRD : trr = 75ns (typ....
china
|
|
|
|
|
Fuji N-Channel FMH23N50E Silicon Power Mosfet 23a 500v Dc-Dc Converters Power Supply Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Features ...
|
|
|
|
|
BGT24LTR11N16E6327XTSA1 RF Power Transistors Silicon Germanium 24GHz RadarTransceiver MMIC Frequency 24GHz ~ 24.25GHz Power - Output 6dBm Serial Interfaces - Voltage - Supply 3.3V ...
china
|
|
|
|
|
TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if ...
china
|
|
|
|
|
CNY74-2 Power Mosfet Transitor Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a ...
china
|
|
|
|
|
Mosfet Power Transistor IRFP90N20DPBF 200V 94A 23mOhm 180nCAC MOSFET Transistor Applications • High frequency DC-DC converters • Lead-Free Description The IR MOSFET family of power ...
|
|
|
|
|
AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high...
china
|
|
|
|
|
Low Gate Charge Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field ...
china
|
|
|
|
|
Features • Programmable Output Voltage to 36 Volts • Low Dynamic Output Impedance 0.2Ω Typical • Sink Current Capability of 1.0 to 100mA • Equivalent Full-Range Temperature ...
china
|
|
|
|
|
Infineon Pnp Power Transistor IRF9530PBF -100V -14A 200 MOhms 1 P-Channel 38.7 NC Applications Increased ruggedness Wide availability from distribution partners Industry standard ...
|
|
|
|
|
HMC789ST89ETR RF Power Transistors Product Description: The HMC789ST89ETR RF Power Transistors are high-performance, high-frequency, high-power transistors suitable for use in ...
china
|
|
|
|
|
Low Gate Charge Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field ...
china
|
|
|
|
|
DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • Lead Formed for ...
china
|
|
|
|
|
N Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = ...
china
|
|
|
|
|
GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where ...
china
|
|
|
You may also be interested in :
