Results for1200nits free standing touch kioskfrom 30878 Products.
|
5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra...
|
|
|
|
4x4m Free Standing Guard Boxes Prefabricated Bamboo Modular Horse Stable Box Doors Secure, long-lasting, and quality stable door designs are essential for a functional stable. At ...
china
|
|
|
|
Anti Acid And Alkali Phenolic Worktop Steel Lab Furniture Science Lab Workstations 1.Descriptions: Normal Size(W*D*H)(mm) Wall Bench: L*750(width)*850 or 900(height)mm / Island ...
|
|
|
|
43inch Free Stand Advertising Display Android System Video Player Portability Android WIFI/4G type NAND FLASH: 2GB(4G or 8G) Networking: RJ45/Built-in Wireless 802.11b/g/n,WAPI...
china
|
|
|
|
Product Description: Corten Steel Sculpture is a modern mail box made of Corten Steel, a material that is known for its weathered and rusty surface. It's the perfect choice for ...
|
|
|
|
Gas Griddle With AN Oven Commercial Free Standing Flat Grill Griddle For Kitchen Product descriptions from the supplier Model WL4356357 Power 11.8+5.8kw Gas pressure(Pa) 2800 ...
|
|
|
|
5*10mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
|
|
|
|
Kitchen Free Standing Stainless Steel 4 Burners Gas Range Stove With Oven Product descriptions from the supplier item value Place of Origin GUANGZHOU Brand Name WILLCO Model Number ...
|
|
|
|
5*10.5mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Generative adversarial networks (GANs) are ...
|
|
|
|
5*10mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview GaN has many serious advantages over ...
|
|
|
|
5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device Overview Since the 1990s, it has been used commonly in light ...
|
|
|
|
5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Because GaN transistors are able to ...
|
|
|
|
5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate ...
|
|
|
|
10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview Premium quality GaN crystal substrates with low ...
|
|
|
|
5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high...
|
|
|
|
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices To reduce the Fe trapping carrier and the sheet resistances of the two...
|
|
|
|
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The growth characteristics of Fe-doped GaN epitaxial layers on semi...
|
|
|
|
10x10mm2 (-201) Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.3 nm Resistance<9E18Ω/cm-3 Optoelectron...
|
|
|
|
10x10mm2 100(off 6°) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤5nm Optoelectronic devices, ...
|
|
|
|
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
|
|
|
You may also be interested in :