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1 - 2GHz RF Power Amplifier Module High Stability Low Power Consumption

VBE Technology Shenzhen Co., Ltd.

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Address: Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China

Contact name:Charms Zhao

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1 - 2GHz RF Power Amplifier Module High Stability Low Power Consumption

Country/Region china
City & Province shenzhen guangdong
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Product Details

1-2GHz , L-Band , RF Low Noise Amplifier LNA , RF Power Amplifier Module

Model: VBP2GL

 

VBE RF Power Amplifier Module Instructions:

 

       VBE solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA),low noise amplifier(LNA), Radio Frequency outdoor unit(ODU) and customized radio frequency module solution,the frequency band cover P-wave band,L-wave band,S-wave band,Ku-wave band and Ka-wave band and so on,broadly applying in high-end equipment system.The module adopt a number of advanced technology in product designing and satisfy different requirement of function and performance parameter.

 

Features:

 

1. Wide Frequency band;
2. Low Output noise;
3. Low power consumption, high linearity;
4. Hybrid micro-assembly process, small size, high stability;
5. Wide operating temperature range;
6. Custom made available

 

Technical Specifications:

 

NO.ItemDescriptionMin Typical MaxUnit
1Frequency BandA
B
C
1.5 1.6
1.4 1.7
1.1 1.6
GHz
2GainSelectable40 50 60dB
3Gain FlatnessFull Band+/-0.5dB
4VSWRInput/Output1.3:1
 
5Noise temperature23°C45°K
61dB Compression Point Power
 
≥+10dBm
73rd Order IMDDual-tone-12dBm≤-51dBc
8Gain Stability24 Hours+/-0.5dB
9ConnectorInput/OutputN or SMA
 
10Input OverloadOverload 1min0dBm
11Working VoltageDC+12 +15V
12Working Temperature
 
-40~+70°C

 

Applications:

 

  • Satallite Communication;
  • Military Communication;
  • Jamming Radio Signals;
  • Electronic Countermeasures(ECM);
  • Mobile Communications;
  • Etc.

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