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Very high accuracy (5 µV) zero drift micropower 5 V operational amplifiers
Features
Very high accuracy and stability: offset voltage 5 µV max at 25 °C, 8 µV over full temperature range (-40 °C to 125 °C) Rail-to-rail input and output
Low supply voltage: 1.8 - 5.5 V
Low power consumption: 40 µA max. at 5 V
Gain bandwidth product: 400 kHz
High tolerance to ESD: 4 kV HBM
Extended temperature range: -40 to 125 °C Micro-packages: SC70-5, DFN8 2x2, and QFN16 3x3
Benefits
Higher accuracy without calibration
Accuracy virtually unaffected by temperature change
Related products
SeeTSV711orTSV731for continuous-time precision amplifiers
Applications
Battery-powered applications
Portable devices
Signal conditioning
Medical instrumentation
Description
The TSZ12x series of high precision operational amplifiers offer
very low input offset voltages with
virtually zero drift.
TSZ121 is the single version, TSZ122 the dual version, and TSZ124
the quad version, with pinouts compatible with industry standards.
The TSZ12x series offers rail-to-rail input and output, excellent
speed/power consumption ratio, and 400 kHz gain bandwidth product,
while consuming less than 40 µA at 5 V. The devices also feature an
ultra-low input bias current.
These features make the TSZ12x family ideal for sensor interfaces,
battery-powered applications and portable applications.
Absolute maximum ratings and operating conditions
Table 1: Absolute maximum ratings (AMR)
| Symbol | Parameter | Value | Unit | |
| VCC | Supply voltage(1) | 6 |
V | |
| Vid | Differential input voltage(2) | ±VCC | ||
| Vin | Input voltage(3) | (VCC-) - 0.2 to (VCC+) + 0.2 | ||
| Iin | Input current(4) | 10 | mA | |
| Tstg | Storage temperature | -65 to 150 | °C | |
| Tj | Maximum junction temperature | 150 | ||
Rthja |
Thermal resistance junction to | SC70-5 | 205 |
°C/W |
| SOT23-5 | 250 | |||
| DFN8 2x2 | 57 | |||
| MiniSO8 | 190 | |||
| SO8 | 125 | |||
| QFN16 3x3 | 39 | |||
| TSSOP14 | 100 | |||
ESD | HBM: human body model(7) | 4 | kV | |
| MM: machine model(8) | 300 | V | ||
| CDM: charged device model(9) | 1.5 | kV | ||
| Latch-up immunity | 200 | mA | ||
Notes:
(1)All voltage values, except the differential voltage are with respect to the network ground terminal.
(2)The differential voltage is the non-inverting input terminal with respect to the inverting input terminal.
(3)Vcc - Vin must not exceed 6 V, Vin must not exceed 6 V
(4) Input current must be limited by a resistor in series with the inputs.
(5) Rth are typical values.
(6)Short-circuits can cause excessive heating and destructive dissipation.
(7) Human body model: 100 pF discharged through a 1.5 kΩ resistor between two pins of the device, done for all couples of pin combinations with other pins floating.
(8)Machine model: a 200 pF cap is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5 Ω), done for all couples of pin combinations with other pins floating.
(9)Charged device model: all pins plus package are charged together to the specified voltage and then discharged directly to ground.
Table 2: Operating conditions
| Symbol | Parameter | Value | Unit |
| VCC | Supply voltage | 1.8 to 5.5 | V |
| Vicm | Common mode input voltage range | (VCC-) - 0.1 to (VCC+) + 0.1 | |
| Toper | Operating free air temperature range | -40 to 125 | °C |
3
Electrical characteristics
Table 3: Electrical characteristics at VCC+ = 1.8 V with VCC- = 0 V, Vicm = VCC/2, T = 25 ° C,
and RL = 10 kΩ connected to VCC/2 (unless otherwise specified)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| DC performance | ||||||
| Vio | Input offset voltage | T = 25 °C | 1 | 5 | μV | |
| -40 °C < T < 125 °C | 8 | |||||
| ΔVio/ΔT | Input offset voltage drift(1) | -40 °C < T < 125 °C | 10 | 30 | nV/°C | |
| Iib | Input bias current (Vout = VCC/2) | T = 25 °C | 50 | 200(2) |
pA | |
| -40 °C < T < 125 °C | 300(2) | |||||
| Iio | Input offset current (Vout = VCC/2) | T = 25 °C | 100 | 400(2) | ||
| -40 °C < T < 125 °C | 600(2) | |||||
CMR | Common mode rejection ratio, 20 log (ΔVicm/ΔVio), Vic = 0 V to VCC , Vout = VCC/2, RL > 1 MΩ | T = 25 °C | 110 | 122 |
dB | |
| -40 °C < T < 125 °C | 110 | |||||
| Avd | Large signal voltage gain, Vout = 0.5 V to (VCC - 0.5 V) | T = 25 °C | 118 | 135 | ||
| -40 °C < T < 125 °C | 110 | |||||
| VOH | High-level output voltage | T = 25 °C | 30 |
mV | ||
| -40 °C < T < 125 °C | 70 | |||||
| VOL | Low-level output voltage | T = 25 °C | 30 | |||
| -40 °C < T < 125 °C | 70 | |||||
Iout | Isink (Vout = VCC) | T = 25 °C | 7 | 8 |
mA | |
| -40 °C < T < 125 °C | 6 | |||||
| Isource (Vout = 0 V) | T = 25 °C | 5 | 7 | |||
| -40 °C < T < 125 °C | 4 | |||||
ICC | Supply current (per amplifier, Vout = VCC/2, RL > 1 MΩ) | T = 25 °C | 28 | 40 |
μA | |
| -40 °C < T < 125 °C | 40 | |||||
| AC performance | ||||||
| GBP | Gain bandwidth product |
RL = 10 kΩ, CL = 100 pF | 400 | kHz | ||
| Fu | Unity gain frequency | 300 | ||||
| ɸm | Phase margin | 55 | Degrees | |||
| Gm | Gain margin | 17 | dB | |||
| SR | Slew rate(3) | 0.17 | V/μs | |||
| ts | Setting time | To 0.1 %, Vin = 1 Vp-p, RL = 10 kΩ, CL = 100 pF | 50 | μs | ||
| en | Equivalent input noise voltage | f = 1 kHz | 60 | nV/√ Hz | ||
| f = 10 kHz | 60 | |||||
| Cs | Channel separation | f = 100 Hz | 120 | dB | ||
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| tinit | Initialization time | T = 25 °C | 50 | ps | ||
| -40 °C < T < 125 °C | 100 |
TSZ121, TSZ122, TSZ124
Notes:
(1)SeeSection 5.5: "Input offset voltage drift over temperature". Input offset measurements are performed on x100 gain configuration. The amplifiers and the gain setting resistors are at the same temperature.
(2)Guaranteed by design
(3)Slew rate value is calculated as the average between positive and negative slew rates.
Table 4: Electrical characteristics at VCC+ = 3.3 V with VCC- = 0 V, Vicm = VCC/2, T = 25 ° C,
and RL = 10 kΩ connected to VCC/2 (unless otherwise specified)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| DC performance | ||||||
| Vio | Input offset voltage | T = 25 °C | 1 | 5 | μV | |
| -40 °C < T < 125 °C | 8 | |||||
| ΔVio/ΔT | Input offset voltage drift(1) | -40 °C < T < 125 °C | 10 | 30 | nV/°C | |
| Iib | Input bias current (Vout = VCC/2) | T = 25 °C | 60 | 200(2) |
pA | |
| -40 °C < T < 125 °C | 300(2) | |||||
| Iio | Input offset current (Vout = VCC/2) | T = 25 °C | 120 | 400(2) | ||
| -40 °C < T < 125 °C | 600(2) | |||||
CMR | Common mode rejection ratio, 20 log (ΔVicm/ΔVio), Vic = 0 V to VCC , Vout = VCC/2, RL > 1 MΩ | T = 25 °C | 115 | 128 |
dB | |
| -40 °C < T < 125 °C | 115 | |||||
| Avd | Large signal voltage gain, Vout = 0.5 V to (VCC - 0.5 V) | T = 25 °C | 118 | 135 | ||
| -40 °C < T < 125 °C | 110 | |||||
| VOH | High-level output voltage | T = 25 °C | 30 |
mV | ||
| -40 °C < T < 125 °C | 70 | |||||
| VOL | Low-level output voltage | T = 25 °C | 30 | |||
| -40 °C < T < 125 °C | 70 | |||||
Iout | Isink (Vout = VCC) | T = 25 °C | 15 | 18 |
mA | |
| -40 °C < T < 125 °C | 12 | |||||
| Isource (Vout = 0 V) | T = 25 °C | 14 | 16 | |||
| -40 °C < T < 125 °C | 10 | |||||
ICC | Supply current (per amplifier, Vout = VCC/2, RL > 1 MΩ) | T = 25 °C | 29 | 40 |
μA | |
| -40 °C < T < 125 °C | 40 | |||||
| AC performance | ||||||
| GBP | Gain bandwidth product |
RL = 10 kΩ, CL = 100 pF | 400 | kHz | ||
| Fu | Unity gain frequency | 300 | ||||
| ɸm | Phase margin | 56 | Degrees | |||
| Gm | Gain margin | 19 | dB | |||
| SR | Slew rate(3) | 0.19 | V/μs | |||
| ts | Setting time | To 0.1 %, Vin = 1 Vp-p, RL = 10 kΩ, CL = 100 pF | 50 | μs | ||
| en | Equivalent input noise voltage | f = 1 kHz | 40 | nV/√ Hz | ||
| f = 10 kHz | 40 | |||||
| Cs | Channel separation | f = 100 Hz | 120 | dB | ||
| tinit | Initialization time | T = 25 °C | 50 | μs | ||
| -40 °C < T < 125 °C | 100 | |||||
Table 5: Electrical characteristics at VCC+ = 5 V with VCC- = 0 V, Vicm = VCC/2, T = 25 ° C, and
RL = 10 kΩ connected to VCC/2 (unless otherwise specified)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| DC performance | ||||||
| Vio | Input offset voltage | T = 25 °C | 1 | 5 | μV | |
| -40 °C < T < 125 °C | 8 | |||||
| ΔVio/ΔT | Input offset voltage drift(1) | -40 °C < T < 125 °C | 10 | 30 | nV/°C | |
| Iib | Input bias current (Vout = VCC/2) | T = 25 °C | 70 | 200(2) |
pA | |
| -40 °C < T < 125 °C | 300(2) | |||||
| Iio | Input offset current (Vout = VCC/2) | T = 25 °C | 140 | 400(2) | ||
| -40 °C < T < 125 °C | 600(2) | |||||
CMR | Common mode rejection ratio, 20 log (ΔVicm/ΔVio), Vic = 0 V to VCC , Vout = VCC/2, RL > 1 MΩ | T = 25 °C | 115 | 136 |
dB | |
| -40 °C < T < 125 °C | 115 | |||||
SVR | Supply voltage rejection ratio, 20 log (ΔVCC/ΔVio), VCC = 1.8 V to 5.5 V, Vout = VCC/2, RL > 1 MΩ | T = 25 °C | 120 | 140 | ||
| -40 °C < T < 125 °C | 120 | |||||
| Avd | Large signal voltage gain, Vout = 0.5 V to (VCC - 0.5 V) | T = 25 °C | 120 | 135 | ||
| -40 °C < T < 125 °C | 110 | |||||
EMIRR(3) |
EMI rejection rate = -20 log (VRFpeak/ΔVio) | VRF = 100 mVp , f = 400 MHz | 84 | |||
| VRF = 100 mVp , f = 900 MHz | 87 | |||||
| VRF = 100 mVp , f = 1800 MHz | 90 | |||||
| VRF = 100 mVp , f = 2400 MHz | 91 | |||||
| VOH | High-level output voltage | T = 25 °C | 30 |
mV | ||
| -40 °C < T < 125 °C | 70 | |||||
| VOL | Low-level output voltage | T = 25 °C | 30 | |||
| -40 °C < T < 125 °C | 70 | |||||
Iout | Isink (Vout = VCC) | T = 25 °C | 15 | 18 |
mA | |
| -40 °C < T < 125 °C | 14 | |||||
| Isource (Vout = 0 V) | T = 25 °C | 14 | 17 | |||
| -40 °C < T < 125 °C | 12 | |||||
ICC | Supply current (per amplifier, Vout = VCC/2, RL > 1 MΩ) | T = 25 °C | 31 | 40 |
μA | |
| -40 °C < T < 125 °C | 40 | |||||
| AC performance | ||||||
| GBP | Gain bandwidth product |
RL = 10 kΩ, CL = 100 pF | 400 | kHz | ||
| Fu | Unity gain frequency | 300 | ||||
| ɸm | Phase margin | 53 | Degrees | |||
| Gm | Gain margin | 19 | dB | |||
| SR | Slew rate(4) | 0.19 | V/μs | |||
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| ts | Setting time | To 0.1 %, Vin = 100 mVp-p, RL = 10 kΩ, CL = 100 pF | 10 | μs | ||
| en | Equivalent input noise voltage | f = 1 kHz | 37 | nV/√ Hz | ||
| f = 10 kHz | 37 | |||||
| Cs | Channel separation | f = 100 Hz | 120 | dB | ||
| tinit | Initialization time | T = 25 °C | 50 | μs | ||
| -40 °C < T < 125 °C | 100 |
Notes:
See Section 5.5: "Input offset voltage drift over temperature". Input offset measurements are performed on x100 gain
configuration. The amplifiers and the gain setting resistors are at
the same temperature.
(2)Guaranteed by design
(3)Tested on SC70-5 package
(4)Slew rate value is calculated as the average between positive and negative slew rates.
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