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35ns 1A 200V Super Fast Recovery Rectifiers Es1d Smd Diode DO 214AC

Changzhou Trustec Company Limited
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Address: No. 38 Hongye Road, New Northern District, Changzhou City, 213033, Jiangsu Province, China

Contact name:Selena Chai

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Changzhou Trustec Company Limited

35ns 1A 200V Super Fast Recovery Rectifiers Es1d Smd Diode DO 214AC

Country/Region china
City & Province changzhou jiangsu
Categories Switching Power Supply
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Product Details

ES1A THRU ES1J
SURFACE MOUNT SUPER FAST RECTIFIERS
Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere

 
Product Dimension

 
Product Features
 

The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Super fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds at terminals
 
Mechanical Data
 
Case: JEDEC DO-214AC molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.002 ounce, 0.07 grams
 
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
 
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

 

 SYMBOLSES1AES1BES1CES1DES1EES1GES1JUNITS
Maximum repetitive peak reverse voltage
VRRM
50100150200300400600
VOLTS
Maximum RMS voltage
VRMS
3570105140210280420
VOLTS
Maximum DC blocking voltage
VDC
50100150200300400600
VOLTS
Maximum average forward rectified current at TL=55 ℃
I(AV)
1
Amps
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
IFSM
30
Amps
Maximum instantaneous forward voltage at 1.0A
VF0.951.251.7
Volts
Maximum DC reverse current TA=25℃
at rated DC blocking voltage TA=100℃
IR

5.0

50.0

µA
Maximum reverse recovery time (NOTE 1)
trr
35ns
Typical junction capacitance (NOTE 2)
CJ
15pF
Typical thermal resistance (NOTE 3)
RθJA
60℃/W
Operating junction and storage temperature range
TJ,TSTG
-55 to +150

 

Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
 
CHARACTERISTIC CURVES

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