25AA02E48T-I OT Read Only Memory Electrically Erasable Programmable

25AA02E48T-I/OT Electrically Erasable Programmable Read Only Memory BAV20-TAP MFRC50001T/0FE Memory Data Storage

Features

• Preprogrammed Globally Unique, 48-bit or 64-bit Node Address

• Compatible with EUI-48™ and EUI-64™

• 10 MHz Maximum Clock Frequency

• Low-Power CMOS Technology: - Maximum Write Current: 5 mA at 5.5V - Read Current: 5 mA at 5.5V, 10 MHz - Standby Current: 1 µA at 2.5V

• 256 x 8-bit Organization

• Write Page Mode (up to 16 bytes)

• Sequential Read

• Self-Timed Erase and Write Cycles (5 ms maximum)

• Block Write Protection: - Protect none, 1/4, 1/2 or all of array

• Built-in Write Protection: - Power-on/off data protection circuitry - Write enable latch - Write-protect pin

• High Reliability: - Endurance: 1,000,000 erase/write cycles - Data retention: >200 years - ESD protection: >4000V

• Temperature Ranges Supported:

- Industrial (I): -40 ℃ to +85 ℃

• Pb-Free and RoHS Compliant

Description

The Microchip Technology Inc. 25AA02E48/25AA02E64 (25AA02EXX) is a 2 Kbit Serial Electrically Erasable Programmable Read-Only Memory (EEPROM). The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input.