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TK30E06N1 S1X Discrete Semiconductors Transistor IC Chip MOSFET Through Hole

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TK30E06N1,S1X Discrete Semiconductors Transistors MOSFET Through Hole

. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V)

(2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)

Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	43 A
Rds On - Drain-Source Resistance:	15 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	16 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	53 W
Channel Mode:	Enhancement
Tradename:	U-MOSVIII-H
Packaging:	Tube
Configuration:	Single
Height:	15.1 mm
Length:	10.16 mm
Product Type:	MOSFET
Series:	TK30E06N1
Factory Pack Quantity:	50
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Width:	4.45 mm
Unit Weight:	0.068784 oz

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