Active Member
|
[China]
Address: Room 2201-03, Room 2206, Changfeng International 1, No. 96, Lixin No. 12 Road, Zengcheng District, Guangzhou City, Guangdong province
Contact name:Zhang
Guangzhou Topfast Technology Co., Ltd. |
|
|
Product Description
IRF1404ZPBF Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs
N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Specification:
Category | Discrete Semiconductor Products |
Transistors - FETs, MOSFETs - Single | |
Mfr | Infineon Technologies |
Series | HEXFET® |
Package | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.7mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 200W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Base Product Number | IRF1404 |
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
