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Address: Room 2201-03, Room 2206, Changfeng International 1, No. 96, Lixin No. 12 Road, Zengcheng District, Guangzhou City, Guangdong province
Contact name:Zhang
Guangzhou Topfast Technology Co., Ltd. |
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Product Description
PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors
PBHV8540X PBHV8540 Nexperia Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor
Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor
Description:
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040X.
Application:
• LED driver for LED chain module
• LCD backlighting
• Automotive motor management
• Hook switch for wired telecom
• Switch Mode Power Supply (SMPS)
Features :
• High voltage
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• AEC-Q101 qualified
Name Description Version
PBHV8540X SOT89 plastic surface-mounted package; die pad for good heat transfer; 3 leads
Category | Discrete Semiconductor Products |
Transistors - Bipolar (BJT) - Single | |
Mfr | Nexperia USA Inc. |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 500 mA |
Voltage - Collector Emitter Breakdown (Max) | 400 V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 60mA, 300mA |
Current - Collector Cutoff (Max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
Power - Max | 520 mW |
Frequency - Transition | 30MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Supplier Device Package | SOT-89 |
Base Product Number | PBHV8540 |
| Part number | PBHV8540X,115 |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
Images:
