Active Member
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[China]
Address: No.149, Zhongxin Road, Gaocheng Town, Yixing City, Jiangsu, China
Contact name:Bixia Wu
Wuxi Xuyang Electronics Co., Ltd. |
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1N4150 High Speed Switching Diode 1N4150 50V 200MA With DO-35 Package
Features
1. High reliability
2. High forward current capability
.
Applications
High speed switch and general purpose use in computer and industrial applications
Construction
Silicon epitaxial planar
Mechanical Data
Case: DO-35, MiniMELF
Terminals: Plated Leads Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: DO-35 0.13 grams MiniMELF 0.05 grams
Marking: Cathode Band Only
Absolute Maximum Ratings
TJ = 25°C
| Parameter | Test Conditions | Symbol | Value | Unit |
| Repetitive peak reverse voltage | VRRM | 50 | V | |
| Reverse voltage | VR | 40 | V | |
| Peak forward surge current | tp≦1 s | IFSM | 4 | A |
| Forward current | IF | 600 | mA | |
| Average forward current | VR=0 | IFAV | 300 | mA |
| Power dissipation | Pv | 500 | mW | |
| Junction temperature | Tj | 175 | ℃ | |
| Storage temperature range | Tstg | -65~+125 | ℃ |
Maximum Thermal Resistance
TJ = 25°C
| Parameter | Test Conditions | Symbol | Value | Unit |
| Junction ambient | on PC board 50mm×50mm×1.6mm | RthJA | 500 | K/W |
Electrical Characteristics
TJ = 25°C
| Parameter | Test Condition | Symbol | Min | Typ | Max | Unit |
| Forward Voltage | IF = 1mA | VF | 0.54 | 0.62 | V | |
| IF = 10mA | VF | 0.66 | 0.74 | V | ||
| IF = 50mA | VF | 0.76 | 0.86 | V | ||
| IF = 100mA | VF | 0.82 | 0.92 | V | ||
| IF = 200mA | VF | 0.87 | 1.0 | V | ||
| Reverse Current | VR = 20V | IR | 100 | nA | ||
| VR = 50V, TJ = 150°C | IR | 100 | μA | |||
| Diode Capacitance | VR = 0, f=1MHz, VHF-50mV | CD | 2.5 | pF | ||
| Reverse Recovery Time | IF = IR= 10…100mA, IR = 1mA, RL = 100Ω | trr | 4 | ns |
Drawing:
