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Mosfet Power Transistor TPH2R306NH1,LQ Toshiba Automotive 190A 60V 1.9 MOhms U-MOS Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers ...
Guangdong, china
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TK35N65W High Power Transistor 35A 650V Switching Voltage 270W 115nC 80 MOhms Power Supply Applications Switching Voltage Regulators DTMOSIV Series MOSFETs Toshiba DTMOSIV MOSFETs ...
Guangdong, china
Verified
BTB04-600SL Triacs 4 Amp 600 Volt TO-220-3 Transistors DESCRIPTION TheBTB04-600SL4quadrantsTRIACisintended forgeneralpurposeapplicationswherehighsurge current capability is ...
Guangdong, china
Verified
IRFP9240PBF P-Channel MOSFET 200V 12A TO-247-3 Transistors FEATURES •Dynamic dV/dt rating •Repetitive avalanche rated •P-channel •Isolated central mounting hole •Fast switching ...
Guangdong, china
Verified
POWER TRANSISTOR BUL42D ON TO-220 with 4 AMPERES 700 VOLTS 75 WATTS The BUL42D is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread ...
china
Verified
SILICON POWER TRANSISTORS MJD31BT4 ON TO-252 New and Original Feature STMicroelectronics PREFERREDSALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4...
china
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BCY78; BCY79 PNP switching transistors FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to case • Low voltage (max. 45 V). ...
Guangdong, china
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Silicon PNP Power Transistors 2SA940 DESCRIPTION ·With TO-220 package ·Complement to type 2SC2073 APPLICATIONS ·Power amplifier applications ·Vertical output applications Absolute ...
Guangdong, china
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TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise ...
Guangdong, china
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Transistor input, supporting source drain type PLC communication module Description: * CPU: ARM CortexTM M3 CPU. * Digital Input: Transistor input, supporting source drain type. * Digital Output: NPN transistor output. * ...
Shanghai, china
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Silicon Power Transistors PNP MJL21193 NPN MJL21194 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS The MJL21193 and MJL21194 utilize Perforated Emitter ...
Guangdong, china
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TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP) FEATURE Ÿ High DC Current Gain and Large Current Capability MARKING M28S=Device code Solid dot=Green molding compound ...
Guangdong, china
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TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) FEATURE Ÿ power switching applications MARKING 13003B=Device code Solid dot=Green molding compound device, if none...
Guangdong, china
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TO-92 Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE High voltage MARKING A42=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of ...
Guangdong, china
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TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN) FEATURE Power Switching Applications MARKING 13002B=Device code Solid dot=Green molding compound device, if none...
Guangdong, china
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TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR (NPN) FEATURE Ÿ General Purpose Switching Application MARKING 2N5551=Device code Solid dot=Green molding compound device, if ...
Guangdong, china
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SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low Speed switching Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter ...
Guangdong, china
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TO-126 Plastic-Encapsulate Transistors 3DD13005HD55 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications Ÿ Good high temperature Ÿ Low saturation voltage Ÿ High speed switching ...
Guangdong, china
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TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MARKING D882=Device code Solid dot = Green molding compound device, if none, the normal ...
Guangdong, china
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SOT-89-3L Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURE Power dissipation Marking :A94 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit ...
Guangdong, china
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