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600mA Silicon Power Transistor NPN Power Transistor High Current

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600mA Silicon Power Transistor NPN Power Transistor High Current

Country/Region china
City & Province shenzhen
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Product Details

SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN)

 

 

FEATURE
 

Low Collector-Emitter Saturation Voltage

High Breakdown Voltage

 

Marking :D965A

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
 

SymbolParameterValueUnit
VCBOCollector-Base Voltage310V
VCEOCollector-Emitter Voltage305V
VEBOEmitter-Base Voltage5V
ICCollector Current -Continuous200mA
ICMCollector Current -Pulsed500mA
PCCollector Power Dissipation500mW
RθJAThermal Resistance from Junction to Ambient250℃/W
TJJunction Temperature150
TstgStorage Temperature-55~+150

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=100µA,IE=0310  V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA,IB=0305  V
Emitter-base breakdown voltageV(BR)EBOIE=100µA,IC=05  V

 

Collector cut-off current

ICBOVCB=200V,IE=0  0.25µA
 

 

ICEX

VCE=100V,VX=5V  5µA
  VCE=300V,VX=5V  10µA
Emitter cut-off currentIEBOVEB=5V,IC=0  0.1µA

 

DC current gain

hFE(1)VCE=10V, IC=1mA60   
 hFE(2)VCE=10V, IC=10mA100 300 
 hFE(3)VCE=10V, IC=30mA75   
Collector-emitter saturation voltageVCE(sat)IC=20mA,IB=2mA  0.2V
Base-emitter saturation voltageVBE(sat)IC=20mA,IB=2mA  0.9V
Transition frequencyfTVCE=20V,IC=10mA, f=30MHz50  MHz

 

 

 
 

 Typical Characteristics

 

 

 

 

 Package Outline Dimensions
 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A1.4001.6000.0550.063
b0.3200.5200.0130.020
b10.4000.5800.0160.023
c0.3500.4400.0140.017
D4.4004.6000.1730.181
D11.550 REF.0.061 REF.
E2.3002.6000.0910.102
E13.9404.2500.1550.167
e1.500 TYP.0.060 TYP.
e13.000 TYP.0.118 TYP.
L0.9001.2000.0350.047

 
 

 

 

SOT-89-3L Suggested Pad Layout

 


 
 
SOT-89-3L Tape and Reel



 
 
 

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