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Custom Automotive IGBT Modules 34mm DS-SPS100B17G3R8-S04010015 V1.0

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Custom Automotive IGBT Modules 34mm DS-SPS100B17G3R8-S04010015 V1.0

Country/Region	china
City & Province	wuxi jiangsu
Categories	Electronics Stocks

Product Details

Solid Power-DS-SPS100B17G3R8-S04010015 V1.0

1700V 100A IGBT Half Bridge Module

1700V 100A IGBT

Features:

□ 1700V Trench+ Field Stop technology

□ Freewheeling diodes with fast and soft reverse recovery

□ V_CE(sat) with positive temperature coefficient

□ Low switching losses

Typical Applications:

□ Motor/Servo Drives

□ High Power Converters

□ UPS

□ Photovoltaic

Package

Item	Symbol	Conditions		Values			Unit
Isolation test voltage	VISOL	RMS, f = 50 Hz, t =1 min		4.0			kV
Material of module baseplate				Cu
Internal isolation		(class 1, IEC 61140) Basic insulation (class 1, IEC 61140)		Al₂O₃
Creepage distance	dCreep	terminal to heatsink		17.0			mm
	dCreep	terminal to terminal		20.0
Clearance	dClear	terminal to heatsink		17.0			mm
	dClear	terminal to terminal		9.5
Comparative tracking index	CTI			＞200

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Stray inductance module	LsCE				20		nH
Module lead resistance, terminals - chip	RCC’+EE’		T_C=25℃		0.65		mΩ
Storage temperature	Tstg			-40		125	℃
Mounting torque for module mounting	M6			3.0		5.0	Nm
Terminal connection torque	M5			2.5		5.0	Nm
Weight	G				160		g

IGBT

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Collector-emitter Voltage	VCES		T_vj=25℃	1700	V
Maximum gate-emitter voltage	VGES			±20	V
Transient gate-emitter voltage	VGES	t_p≤10μs,D=0.01		±30	V
Continuous DC collector current	I_C		T_C=25℃	180	A
Continuous DC collector current	I_C		T_C=100℃	100	A
Pulsed collector current,tp limited by T_jmax	ICpulse			200	A
Power dissipation	Ptot			535	W

Characteristic Values

Item	Symbol	Conditions		Values			Unit
Item	Symbol	Conditions		Min.	Typ.	Max.	Unit
Collector-emitter saturation voltage	VCE(sat)	I_C=100A, V_GE=15V	T_vj=25℃		1.65	1.95	V
			T_vj=125℃		1.90
			T_vj=150℃		1.92
Gate threshold voltage	VGE(th)	V_CE=V_GE, I_C=4mA		5.0	5.8	6.5	V
Collector-emitter cut-off current	ICES	V_CE=1700V, V_GE=0V	T_vj=25℃			100	µA
Collector-emitter cut-off current	ICES	V_CE=1700V, V_GE=0V	T_vj=150℃			5	mA
Gate-emitter leakage current	IGES	V_CE=0V,V_GE=±20V, T_vj=25℃		-200		200	nA
Gate Charge	Q_G	V_CE=900V, I_C=75A , V_GE=±15V			0.6		μC
Input Capacitance	Cies	V_CE=25V, V_GE=0V, f =100kHz			9.00		nF
Output Capacitance	Coes				0.58
Reverse Transfer Capacitance	Cres				0.14
Internal gate resistor	RGint	T_vj=25℃			9		Ω
Turn-on delay time,inductive load	td(on)	V_CC=900V,I_C=100A R_G=5.1Ω, V_GE=±15V	T_vj=25℃		194		ns
			T_vj=125℃		218		ns
			T_vj=150℃		222		ns
Rise Time,inductive load	t_r		T_vj=25℃		48		ns
			T_vj=125℃		60		ns
			T_vj=150℃		66		ns
Turn-off delay time,inductive load	td(off)	V_CC=900V,I_C=100A R_G=5.1Ω, V_GE=±15V	T_vj=25℃		322		ns
			T_vj=125℃		494		ns
			T_vj=150℃		518		ns
Fall time,inductive load	t_f		T_vj=25℃		500		ns
			T_vj=125℃		676		ns
			T_vj=150℃		740		ns
Turn-on energy loss per pulse	Eon	V_CC=900V,I_C=100A R_G=5.1Ω, V_GE=±15V	T_vj=25℃		20.1		mJ
			T_vj=125℃		33.4		mJ
			T_vj=150℃		36.8		mJ
Turn off Energy loss per pulse	Eoff		T_vj=25℃		20.7		mJ
			T_vj=125℃		30.6		mJ
			T_vj=150℃		32.8		mJ
SC data	ISC	V_GE≤15V, V_CC=900V	tp≤10µs T_vj=150℃			360	A
IGBT thermal resistance,junction-case	RthJC					0.28	K /W
Operating Temperature	TJop			-40		175	℃

Diode

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Repetitive reverse voltage	VRRM		T_vj=25℃	1700	V
Continuous DC forward current	I_F		T_C=25℃	140	A
Continuous DC forward current	I_F		T_C=100℃	100
Diode pulsed current,tp limited by T_Jmax	IFpulse			200

Characteristic Values

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Forward voltage	V_F	I_F=100A , V_GE=0V	T_vj=25℃		2.00	2.40	V
			T_vj=125℃		2.15
			T_vj=150℃		2.20
Reverse recovery time	trr	I_F=100A dI_F/dt=-2100A/μs (T_vj=150°C) V_R=900V, V_GE=-15V	T_vj=25℃		120		ns
			T_vj=125℃		180
			T_vj=150℃		200
Peak reverse recovery current	IRRM		T_vj=25℃		193		A
			T_vj=125℃		216
			T_vj=150℃		218
Reverse recovery charge	QRR		T_vj=25℃		20		µC
			T_vj=125℃		40
			T_vj=150℃		47
Reverse recovery energy loss per pulse	Erec		T_vj=25℃		4.9		mJ
			T_vj=125℃		21.2
			T_vj=150℃		24.1
Diode thermal resistance,junction-case	RthJCD					0.40	K /W
Operating Temperature	TJop			-40		175	℃

Output characteristic(typical) Output characteristic(typical)

I_C = f (V_CE) I_C = f (V_CE) T_vj= 150°C

Transfer characteristic(typical) Switching losses IGBT (typical)

I_C = f (V_GE) E = f (R_G)

V_CE = 20V V_GE = ±15V, I_C = 100A, V_CE = 900V

IGBT RBSOA

Switching losses IGBT (typical) Reverse bias safe operating area(RBSOA)

E = f (I_C) I_C =f (V_CE)

V_GE = ±15V, R_G = 5.1Ω , V_CE = 900V V_GE = ±15V, R_goff = 5.1Ω, T_vj = 150°C

Typical capacitance as a function of collector-emitter voltage Gate charge (typical)

C = f (V_CE) V_GE = f (Q_G)

f = 100 kHz, V_GE = 0V I_C = 100A, V_CE = 900V

IGBT

IGBT transient thermal impedance as a function of pulse width Forward characteristic of Diode (typical)

Zth(j-c) = f (t) I_F = f (V_F)

Switching losses Diode(typical) Switching losses Diode(typical)

E_rec = f (R_G) E_rec = f (I_F)

I_F = 100A, V_CE = 900V R_G = 5.1Ω, V_CE = 900V

Diode transient thermal impedance as a function of pulse width

Zth(j-c) = f (t)

The "1700V 100A IGBT Half Bridge Module" integrates two IGBTs in a half-bridge configuration, suitable for applications requiring moderate power. It provides precise control over voltage (1700V) and current (100A), requiring effective cooling for reliable operation. Detailed specifications can be found in the manufacturer's datasheet.

Circuit diagram headline