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150A High Power IGBT Module 34mm DS-SPS150B12G3M4-S0401G0021 V1.0.

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150A High Power IGBT Module 34mm DS-SPS150B12G3M4-S0401G0021 V1.0.

Country/Region	china
City & Province	wuxi jiangsu
Categories	Electronics Stocks

Product Details

Solid Power-DS-SPS150B12G3M4-S0401G0021 V1.0.

1200V 150A IGBT Half Bridge Module

1200V 150A IGBT

Features:

□ 1200V Trench+ Field Stop technology

□ Freewheeling diodes with fast and soft reverse recovery

□ V_CE(sat) with positive temperature coefficient

□ Low switching losses

Typical Applications:

□ Motor/Servo Drives

□ High Power Converters

□ UPS

□ Photovoltaic

Package

Item	Symbol	Conditions		Values			Unit
Isolation test voltage	VISOL	RMS, f = 50 Hz, t =1 min		4.0			kV
Material of module baseplate				Cu
Internal isolation		(class 1, IEC 61140) Basic insulation (class 1, IEC 61140)		Al₂O₃
Creepage distance	dCreep	terminal to heatsink		17.0			mm
	dCreep	terminal to terminal		20.0
Clearance	dClear	terminal to heatsink		17.0			mm
	dClear	terminal to terminal		9.5
Comparative tracking index	CTI			＞200

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Stray inductance module	LsCE				20		nH
Module lead resistance, terminals - chip	RCC’+EE’		T_C=25℃		0.65		mΩ
Storage temperature	Tstg			-40		125	℃
Mounting torque for module mounting	M6			3.0		5.0	Nm
Terminal connection torque	M5			2.5		5.0	Nm
Weight	G				160		g

IGBT

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Collector-emitter Voltage	VCES		T_vj=25℃	1200	V
Maximum gate-emitter voltage	VGES			±20	V
Transient gate-emitter voltage	VGES	t_p≤10μs,D=0.01		±30	V
Continuous DC collector current	I_C		T_C=25℃	200	A
Continuous DC collector current	I_C		T_C=100℃	150	A
Pulsed collector current,tp limited by T_jmax	ICpulse			300	A
Power dissipation	Ptot			600	W

Characteristic Values

Item	Symbol	Conditions		Values			Unit
Item	Symbol	Conditions		Min.	Typ.	Max.	Unit
Collector-emitter saturation voltage	VCE(sat)	I_C=150A, V_GE=15V	T_vj=25℃		1.50	1.80	V
			T_vj=125℃		1.65
			T_vj=150℃		1.70
Gate threshold voltage	VGE(th)	V_CE=V_GE, I_C=6mA		5.0	5.8	6.5	V
Collector-emitter cut-off current	ICES	V_CE=1200V, V_GE=0V	T_vj=25℃			100	µA
Collector-emitter cut-off current	ICES	V_CE=1200V, V_GE=0V	T_vj=150℃			5	mA
Gate-emitter leakage current	IGES	V_CE=0V,V_GE=±20V, T_vj=25℃		-200		200	nA
Gate Charge	Q_G	V_CE=600V, I_C=150A , V_GE=±15V			1.8		μC
Input Capacitance	Cies	V_CE=25V, V_GE=0V, f =100kHz			30.0		nF
Output Capacitance	Coes				0.95
Reverse Transfer Capacitance	Cres				0.27
Internal gate resistor	RGint	T_vj=25℃			2		Ω
Turn-on delay time,inductive load	td(on)	V_CC=600V,I_C=150A R_G=3.3Ω, V_GE=±15V	T_vj=25℃		128		ns
			T_vj=125℃		140		ns
			T_vj=150℃		140		ns
Rise Time,inductive load	t_r		T_vj=25℃		48		ns
			T_vj=125℃		52		ns
			T_vj=150℃		52		ns
Turn-off delay time,inductive load	td(off)	V_CC=600V,I_C=150A R_G=3.3Ω, V_GE=±15V	T_vj=25℃		396		ns
			T_vj=125℃		448		ns
			T_vj=150℃		460		ns
Fall time,inductive load	t_f		T_vj=25℃		284		ns
			T_vj=125℃		396		ns
			T_vj=150℃		424		ns
Turn-on energy loss per pulse	Eon	V_CC=600V,I_C=150A R_G=3.3Ω, V_GE=±15V	T_vj=25℃		4.9		mJ
			T_vj=125℃		7.6		mJ
			T_vj=150℃		8.3		mJ
Turn off Energy loss per pulse	Eoff		T_vj=25℃		16.1		mJ
			T_vj=125℃		21.7		mJ
			T_vj=150℃		22.5		mJ
SC data	ISC	V_GE≤15V, V_CC=800V	tp≤10µs T_vj=150℃			650	A
IGBT thermal resistance,junction-case	RthJC					0.25	K /W
Operating Temperature	TJop			-40		150	℃

Diode

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Repetitive reverse voltage	VRRM		T_vj=25℃	1200	V
Continuous DC forward current	I_F			150	A
Diode pulsed current,tp limited by T_Jmax	IFpulse			300	A

Characteristic Values

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Forward voltage	V_F	I_F=150A , V_GE=0V	T_vj=25℃		2.30	2.70	V
			T_vj=125℃		2.50
			T_vj=150℃		2.50
Reverse recovery time	trr	I_F=150A dI_F/dt=-3300A/μs (T_vj=150°C) V_R=600V, V_GE=-15V	T_vj=25℃		94		ns
			T_vj=125℃		117
			T_vj=150℃		129
Peak reverse recovery current	IRRM		T_vj=25℃		151		A
			T_vj=125℃		166
			T_vj=150℃		170
Reverse recovery charge	QRR		T_vj=25℃		15.6		µC
			T_vj=125℃		23.3
			T_vj=150℃		24.9
Reverse recovery energy loss per pulse	Erec		T_vj=25℃		6.7		mJ
			T_vj=125℃		10.9
			T_vj=150℃		11.9
Diode thermal resistance,junction-case	RthJCD					0.46	K /W
Operating Temperature	TJop			-40		150	℃

Output characteristic(typical) Output characteristic(typical)

I_C = f (V_CE) I_C = f (V_CE) T_vj= 150°C

IGBT

Transfer characteristic(typical) Switching losses IGBT (typical)

I_C = f (V_GE) E = f (R_G)

V_CE = 20V V_GE = ±15V, I_C = 150A, V_CE = 600V

IGBT RBSOA

Switching losses IGBT (typical) Reverse bias safe operating area(RBSOA)

E = f (I_C) I_C =f (V_CE)

V_GE = ±15V, R_G = 3.3Ω , V_CE = 600V V_GE = ±15V, R_goff = 5.1Ω, T_vj = 150°C

Typical capacitance as a function of collector-emitter voltage Gate charge (typical)

C = f (V_CE) V_GE = f (Q_G)

f = 100 kHz, V_GE = 0V I_C = 150A, V_CE = 600V

IGBT Forward characteristic of Diode (typical)

IGBT transient thermal impedance as a function of pulse width I_F = f (V_F)

Zth(j-c) = f (t)

Switching losses Diode(typical) Switching losses Diode(typical)

E_rec = f (R_G) E_rec = f (I_F)

I_F = 150A, V_CE = 600V R_G = 3.3Ω, V_CE = 600V

Diode transient thermal impedance as a function of pulse width

Zth(j-c) = f (t)

The "1200V 150A IGBT Half Bridge Module" integrates two IGBTs in a half-bridge configuration. It's suitable for applications requiring moderate to high power, offering precise control over voltage (1200V) and current (150A). Effective cooling is essential for reliable operation, and detailed specifications can be found in the manufacturer's datasheet.

Circuit diagram headline