HMC442LC3BTR RF Power Transistor - Great For High Speed Applications

Product: HMC442LC3BTR RF Power Transistors

Description:

The HMC442LC3BTR is a high gain, medium power GaN on SiC Heterojunction FET which is suitable for use in a wide range of applications including military, aerospace, and commercial.

Features:

- High gain, medium power GaN on SiC Heterojunction FET
- 50 W CW output power
- 10.2 dB gain
- 28 V operation
- High efficiency
- High frequency operation
- Low distortion
- High linearity
- Low noise
- Rugged construction

Package: 2-Pin TO-263 Package

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Service >>>

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