HMC788ALP2ETR RF Power Transistor High Power Gain And Efficiency

HMC788ALP2ETR, RF Power Transistor

Description: The HMC788ALP2ETR is a GaN on Silicon Carbide (SiC) RF power transistor that is designed for use in high power, wideband communication systems. It operates over the 0.5 to 2.7GHz frequency range with a maximum output power of 50W. The device offers an extremely wide instantaneous bandwidth, high efficiency, and excellent linearity performance.

Features:

• Power Gain of 27dB
• Maximum Output Power of 50W
• 0.5 to 2.7 GHz Frequency Range
• High Efficiency
• Excellent Linearity Performance
• Wideband Instantaneous Bandwidth
• Lead-Free/RoHS Compliant

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