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6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window

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2inch 4iinch 6Inch Sapphire based AlN templates AlN film on sapphire substrate sapphire window sapphire wafer

Applications of AlN template

Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future

electronic devices. As a typical kind of 3rd/4th-generation semiconductor material, aluminum nitride (AlN) has

superior physical and chemical properties such as wide bandgap, high thermal conductivity, high breakdown filed,

high electronic mobility and corrosion/radiation resistance, and is a perfect substrate for optoelectronic devices,

radio frequency (RF) devices, high-power/high-frequency electronic devices, etc.. Particularly, AlN substrate is the

best candidate for UV-LED, UV detectors, UV lasers, 5G high-power/high-frequency RF devices and 5G SAW/BAW

devices, which could widely be used in environmental protection, electronics, wireless communications, printing,

biology, healthcare, military and other fields, such as UV purification/sterilization, UV curing, photocatalysis, coun

terfeit detection, high-density storage, medical phototherapy, drug discovery, wireless and secure communication,

aerospace/deep-space detection and other fields.

we have developed a serials of proprietary processes and technologies to fabricate

high-quality AlN templates. At present, Our OEM is the only company worldwide who can produce 2-6 inch AlN

templates in large-scale industrial production capability with capacity of 300,000 pieces in 2020 to meet explosive

market demand from UVC-LED, 5G wireless communication, UV detectors and sensors etc

Our OEM has developed a serials of proprietary technologies and the-state-of-the art PVT growth reactors and facilities to

fabricate different sizes of high-quality single crystalline AlN wafers, AlN temlpates. We are one of the few world-leading

high-tech companies who own full AlN fabrication capabilities to produce high-quality AlN boules and wafers, and provide

professional services and turn-key solutions to our customers,arranged from the growth reactor and hotzone design,

modeling and simulation, process design and optimization, crystal growth,

wafering and material characterization. Up to April 2019, they have applied more than 27 patents (including PCT).

Specification

aracteristic Specification

Other relaterd 4INCH GaN Template Specification

	GaN/ Al₂O₃ Substrates (4") 4inch
Item	Un-doped	N-type	High-doped N-type
Size (mm)	Φ100.0±0.5 (4")
Substrate Structure	GaN on Sapphire(0001)
SurfaceFinished	(Standard: SSP Option: DSP)
Thickness (μm)	4.5±0.5; 20±2;Customized
Conduction Type	Un-doped	N-type	High-doped N-type
Resistivity (Ω·cm)(300K)	≤0.5	≤0.05	≤0.01
GaN Thickness Uniformity	≤±10% (4")
Dislocation Density (cm-2)	≤5×108
Useable Surface Area	＞90%
Package	Packaged in a class 100 clean room environment.

Crystal structure	Wurtzite
Lattice constant (Å)	a=3.112, c=4.982
Conduction band type	Direct bandgap
Density (g/cm3)	3.23
Surface microhardness (Knoop test)	800
Melting point (℃)	2750 (10-100 bar in N2)
Thermal conductivity (W/m·K)	320
Band gap energy (eV)	6.28
Electron mobility (V·s/cm2)	1100
Electric breakdown field (MV/cm)	11.7