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Silicon Carbide Trays SiC wafers tray plate for ICP etching MOCVD Susceptor Wear Resistant
Description
SIC coated graphite trays are crafted from high purity graphite matrices, receiving a SiC coating via CVD (chemical vapor deposition) with exceptionally high purity and theoretical density. This CVD SiC coating is exceptionally hard, enabling it to be polished to a mirror-like finish, exhibiting ultra-high purity and remarkable wear resistance. These coated trays excel in high vacuum and high-temperature environments, making them ideal for the semiconductor industry and other ultra-clean settings. Primarily utilized as substrates for epitaxial layer formation on semiconductor wafers, they offer several advantages, such as ultra-high purity surfaces and superior wear resistance. With CVD ensuring SiC coatings with minimal pores and silicon carbide's polishable nature, these products find wide application in semiconductor industries, including MOCVD trays, RTP, and oxide etching chambers, due to silicon nitride's excellent thermal shock resistance and plasma endurance.
Product showcase
Product properties
| Item | Unit | Technical parameters | |
|---|---|---|---|
| Materail | -- | SSiC | SiSiC |
| Color | -- | Black | Black |
| Density | g/cm3 | 3.12 | 3.06 |
| Water Absorption | % | 0 | 0 |
| HRA | -- | ≥92 | ≥90 |
| Modulus of Elasticity | Gpa | 400 | 350 |
| Flexural Strength (@R.T.) | Mpa | 359 | 300 |
| Compressive Strength (@R.T.) | Mpa | ≥2200 | 2000 |
| Thermal Conductivity (@R.T.) | W/Mk | 110 | 100 |
Coefficient Of Thermal Expansion (20-1000℃) | 10-6/℃ | 4.0 | 4.0 |
| Max. Working Temperature | ℃ | 1500 | 1300 |
Product application
ICP Etching: Silicon Carbide Trays are crucial components in ICP (Inductively Coupled Plasma) etching systems, where they serve as robust platforms for holding and processing semiconductor wafers. The wear-resistant nature of the trays ensures prolonged reliability and consistency during the etching process, contributing to precise pattern transfer and surface modification on the wafers.
MOCVD Susceptor: In MOCVD systems, Silicon Carbide Trays act as susceptors, providing stable support for the deposition of thin films onto semiconductor substrates. The trays' ability to maintain high purity and withstand elevated temperatures makes them ideal for facilitating the growth of epitaxial layers with superior quality and uniformity.
Wear Resistant: Equipped with SiC coating, these trays exhibit exceptional wear resistance, ensuring prolonged service life even under demanding operating conditions. Their resistance to abrasion and chemical degradation enhances productivity and minimizes downtime, making them indispensable in high-throughput semiconductor manufacturing environments.
The SIC coated graphite tray is used as a base for fixing and heating semiconductor wafers during heat treatment. Energy can be absorbed and heat the chip through induction, conduction, or radiation, and its thermal shock resistance, thermal conductivity, and purity are essential for rapid thermal processing (RTP). In the silicon epitaxy process, the wafer is carried on a base, and the performance and quality of the base have a crucial effect on the quality of the wafer epitaxial layer.
Q&A
What is graphite susceptor?
Susceptors and muffles from Graphite Materials protect the sinter from external influences, such as direct thermal radiation from the heating elements. They heat up themselves and emit their heat uniformly to the workpieces. Local overheating (so-called hot spots) is avoided.
What is SiC coating?
What is a silicon carbide coating? SIGRAFINE SiC Coating is a dense, wear-resistant silicon carbide (SiC) coating. It has high corrosion and heat resistance properties as well as excellent thermal conductivity. We apply SiC in thin layers onto the graphite using the chemical vapor deposition (CVD) process. Applications.
What is silicon carbide graphite?
SiC30 - Silicon carbide-graphite composite material
SiC30 is an exceptional composite material composed of silicon carbide and
graphite, whose combination of properties solves problems that cannot be
solved with other materials.Product
Product recommendation
①SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm(for more please click the picture)
Notice
Please contact us for specific details regarding customizable product options.
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