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VT6M1T2CR N P Channel Mosfet 1.2V Drive Nch+Pch MOSFET

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VT6M1T2CR MOSFET 1.2V Drive Nch+Pch MOSFET

Product Attribute	Attribute Value
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	VMT-6
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	100 mA
Rds On - Drain-Source Resistance:	3.5 Ohms, 3.8 Ohms
Vgs - Gate-Source Voltage:	- 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage:	300 mV
Qg - Gate Charge:	-
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	150 mW
Channel Mode:	Enhancement
Series:	VT6M1
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	ROHM Semiconductor
Configuration:	Dual
Fall Time:	38 ns, 137 ns
Product Type:	MOSFET
Rise Time:	4 ns, 62 ns
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel MOSFET, 1 P-Channel MOSFET
Typical Turn-Off Delay Time:	20 ns, 325 ns
Typical Turn-On Delay Time:	5 ns, 46 ns
Part # Aliases:	VT6M1
Unit Weight:	0.000485 oz

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