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55dB Gain Digital RF Power Amplifier 10W High Power LTE 1500MHz

Shenzhen Maixintong Technology Co., Ltd

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55dB Gain Digital RF Power Amplifier 10W High Power LTE 1500MHz

Country/Region china
City & Province shenzhen
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Product Details

10W High Power 55dB Gain Broadband TD LTE 1500MHz 10W OFDM

Product Description:

LTE Power Amplifier is an ideal solution for data transmission applications due to its high power, low noise performance. It features a 28V power supply, a gain of more than 55dB, an efficiency of over 26%, and a temperature range of -20 to 65 degrees Celsius. It is capable of amplifying an OFDM signal with an input power of -10dBm to 0dBm. Additionally, it has a high linearity which makes it suitable for use in a variety of applications. With its robust design, it can deliver reliable performance even in extreme conditions.

 

Features:

  • Product Name: LTE Power Amplifier
  • Power Supply: 28V
  • Size: 170*110*20mm
  • Efficiency: >15%
  • Noise Figure: <3dB
  • Input/Output VSWR: <1.8
  • ACPR 31dB
  • Bi-Directional
  • Video Link
 

Technical Parameters:

ItemSpecification
Frequency Range1200 - 1500MHz
Output Power40dBm
Tx Gain55 ± 1 (dB)
Rx Gain10 ± 1 (dB)
Gain Flatness2.0 (dB) Peak To Peak Over Freq Band
Gain Stability± 1.5 (dB) Over Temp
In/Out VSWRLess Than 1.5:1
DC Current2.8 (A)
Size(DxWxH)170x110x20(mm)
In/Out CommectorMCX/SMA
Time Delay≤2(us)
Operation Temp.-20 ~ +65 (°C)
I/O MapSocket1x10Pin 1.25mm
POWER SOCKET 1x4Pin 2.54mm
Pin 1,2:GND
Pin 3,4:28V
 
Control SOCKET 2x3Pin 2.0mm
Pin 1,3,6:NC
Pin 2:LNA_EN
Pin 4:GND
Pin 5:PA_EN
Supply Voltage28V
Work ModeTDD OFDM Signal

 

Applications:

The MXT LTE Power Amplifier provides a high linearity solution for TD LTE applications. With a gain of >55dB, a frequency range from 1200MHz to 1500MHz, a noise figure of <3dB, an output power of >40dBm, a temperature range of -20℃ to +65℃, and a high linear performance, it is the ideal choice for any LTE application.

Whether you are looking for improved coverage, increased data rates, or better signal-to-noise ratio, MXT LTE Power Amplifier provides a high linearity solution for TD LTE applications. Its high output power and high linearity make it an ideal choice for any LTE application.

MXT LTE Power Amplifier is designed to meet the most demanding requirements of LTE applications. The amplifier offers excellent linearity, high gain, and low noise figure, enabling it to provide high performance for TD LTE applications. It also offers excellent temperature stability, allowing it to operate reliably in extreme temperature conditions.

If you're looking for a reliable and efficient LTE solution, the MXT LTE Power Amplifier is the perfect choice. Its high gain, wide frequency range, low noise figure, and high linearity make it an ideal solution for any TD LTE application.

 

Customization:

Customized RF Power Amplifier Service

We provide customized RF Power Amplifier Service according to your requirements. Our Model Number is TDD1200T150M 10W-28V which is made in China. The Minimum Order Quantity is 2. The price is negotiable. This High Power Radio Amplifier works in OFDM Signal mode and has a Supply Current of 2.8A, and a Supply Voltage of 28V. Our Transmitter Power Amplifier is ideal for High Power Radio Amplifier applications with its high power output, low noise and high linearity performance.

 

 

Support and Services:

RF Power Amplifier Technical Support and Services
  • Provide technical guidance on the installation, use and maintenance of RF Power Amplifier.
  • Provide troubleshooting and repair services.
  • Provide replacement parts and components.
  • Answer customer inquiries and provide product information.
  • Provide technical training for customers.
  • Provide warranty service.
 

 

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