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[China]
Address: No.200, Zgaoxian Road, Jiading Zone, Shanghai, China
Contact name:sales
Nanjing Crylink Photonics Co.,Ltd |
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Description
Titanium-doped sapphire (Ti3+:sapphire) as an optically pumped, solid-state laser crystal is widely used in wavelength tunable laser which tunable range is 650-1100nm, and peaking at 800nm, it is one of the widest wavelength tunable laser crystal. The upper-state lifetime of Ti:sapphire is short to 3.2ms, because of high saturation power, it’s hard to pump it by lamp, argon ion lasers or frequency-doubled Nd:YAG laser etc. is usually adapted. Using self-mode-locking technology, the Ti:Sapphire laser can output laser pulse with pulse width as short as 6.5fs directly, which is the narrowest laser pulse of all lasers that directly output from the resonant cavity. Through frequency-double technology, the wavelength of laser beam can cover wide band from blue to deep ultraviolet, produced 193 nm laser has been used in lithography machine.
Parameter
Material and Specifications
| Materials | Ti3+:Al2O3 |
| Concentration | (0.05~0.35) wt% |
| Orientation | A-Axis within 5°,E-vector parallel to C-Axis |
| Parallelism | 30〞 |
| Perpendicularity | 5ˊ |
| Figure of Merit(FOM) | 100~300 |
| Wavefront Distortion | <λ /4@632 nm |
| Surface Flatness | <λ/8@632 nm |
| Clear Aperture | >90% |
| Surface Quality | 10-5(MIL-PRF-13830B) |
| Coatings | Standard coating is AR with R < 5.0% each |
| face @532 nm and R < 0.5% each face, | |
| from 650 nm to 850 nm. Custom coatings | |
| Chamfer | <0.2×45° |
Physical and Chemical Properties
| Crystal Structure | Hexagonal |
| Density | 3.98 g/cm3 |
| Melting Point | 2040 °C |
| Thermal Conductivity | 33 W / (m K) |
| Temperature dependence of refractive index | 13 × 10−6K−1 |
| Thermal shock resistance parameter | 790 W/m |
| Thermal Expansion | ≈ 5 × 10-6K-1 |
| Hardness (Mohs) | 9 |
| Young`s Modulus /GPa | 335 |
| Specific heat | 0.1 cal/g |
| Tensile Strength/Mpa | 400 |
| Diameter | 4-12mm |
| Ti density for 0.1% at. doping | 4.56 × 1019cm−3 |
Optical and Spectral Properties
| Laser Transition | F3/2→F1/2 |
| Laser Wavelength | 660-1200 nm |
| Central emission | 800 nm |
| Turnable Absorption Band | 400-600 nm |
| Absorption peak | 488 nm |
| Emission Cross Section @ 790 nm | 41 × 10-20 cm2 |
| Fluorescence Lifetime | 3.2 ms |
| Emission Linewidth | 650-1100 nm |
| Refractive Index @633 nm | 1.77@ 532 nm; 1.76@800 nm; 1.75@1100 nm |
| Absorption Coefficient | 0.5～6.0 cm-1 |
Absorption and Emission Spectrum
Feature
