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S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector

ShenzhenYijiajie Electronic Co., Ltd.

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Address: Room 1018, Floor 10, Building A, Xinghe Century Building, Caitian South Road, Futian District, Shenzhen

Contact name:Xu

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S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector

Country/Region china
City & Province shenzhen
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Product Details

Product Description:

S7686 Silicon Photodiode Is Used To Measure Sensitivity Close To Spectral Luminescence Efficiency

 

Features:

S7686 is a silicon photodiode whose spectral response characteristics are closer to the sensitivity (spectral luminescence efficiency) of the human eye than traditional visible light compensation sensors (S1133, etc.).

The spectral response is similar to CIE spectral luminescence efficiency

Ceramic package, high reliability

Photographic area: 2.4 × 2.8mm

High speed response: 0.5 US (VR=0 V, RL=1 kω)

Fs value: 8% typical value (vertical light incidence)

Rise time (typical value). 0.5 u s

Junction capacitance (typical value) 200 pF

Measurement condition TYP.TA =25 ℃, unless otherwise noted,Photosensitivity: λ=λp, Dark current: VR=1V, Terminal capacitance: VR=0 V, f=10 kHz

 

Specifications:

Reverse voltage (Max.)10V
spectral response range is480 to 660 nm
peak sensitivity wavelength (typical value) was550 nm
Sensitivity (typical value)0.38 A/W
Dark current (maximum)20 pA

 

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