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2N5551 Tip Power Transistors For Electronic Components VCBO 180V

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Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

Contact name:David Lee

Country/Region	china
City & Province	shenzhen guangdong

TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR (NPN)

FEATURE

Ÿ General Purpose Switching Application

MARKING

2N5551=Device code

Solid dot=Green molding compound device, if none,the normal device

Z=Rank of hFE

ORDERING INFORMATION

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	180	V
VCEO	Collector-Emitter Voltage	160	V
VEBO	Emitter-Base Voltage	6	V
I_C	Collector Current	0.6	A
P_C	Collector Power Dissipation	625	mW
R0 JA	Thermal Resistance From Junction To Ambient	200	Š /W
T_j	Junction Temperature	150	Š
Tstg	Storage Temperature	-55~+150	Š

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=100μA,I_E=0	180			V
Collector-emitter breakdown voltage	V(BR)CEO*	I_C=1mA,I_B=0	160			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=10μA,I_C=0	6			V
Collector cut-off current	ICBO	V_CB=120V,I_E=0			50	nA
Emitter cut-off current	IEBO	V_EB=4V,I_C=0			50	nA
DC current gain	hFE(1)	V_CE=5V, I_C=1mA	80
	hFE(2)	V_CE=5V, I_C=10mA	100		300
	hFE(3)	V_CE=5V, I_C=50mA	50
Collector-emitter saturation voltage	VCE(sat)˄1˅	I_C=10mA,I_B=1mA			0.15	V
	VCE(sat)˄2˅	I_C=50mA,I_B=5mA			0.2	V
Base-emitter saturation voltage	VBE (sat)˄1˅	I_C=10mA,I_B=1mA			1	V
	VBE (sat)˄2˅	I_C=50mA,I_B=5mA			1	V
Collector output capacitance	Cob	V_CB=10V,I_E=0, f=1MHz			6	pF
Emitter input capacitance	Cib	V_BE=0.5V,I_C=0, f=1MHz			20	pF
Transition frequency	f_T	V_CE=10V,I_C=10mA, f=100MHz	100		300	MHz

RANK	A	B	C
RANGE	100-150	150-200	200-300

Typical Characteristics

Package Outline Dimensions