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TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

Country/Region china
City & Province shenzhen guangdong
Categories Other Plastic Products
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Product Details

TO-126 Plastic-Encapsulate Transistors

 

 

 

TIP122 Darlington Transistor (NPN)

TIP127 Darlington Transistor (PNP)

 

 

FEATURE
 
Medium Power Complementary Silicon Transistors
 
 
TO-126
 

1. EMITTER

 

 2. COLLECTOR

 

3. BASE

 

 

 

MARKING

 

 

TIP122 , TIP127=Device code

 

Solid dot = Green molding compound device, if none, the normal device XX=Code

 

 

 

 

Equivalent Circuit

 

 

 

ORDERING INFORMATION

Part NumberPackagePacking MethodPack Quantity
TIP122TO-126Bulk200pcs/Bag
TIP127TO-126Bulk200pcs/Bag
TIP122-TUTO-126Tube60pcs/Tube
TIP127-TUTO-126Tube60pcs/Tube

 

 

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

SymbolParameterTIP122TIP127Unit
VCBOCollector-Base Voltage100-100V
VCEOCollector-Emitter Voltage100-100V
VEBOEmitter-Base Voltage5-5V
ICCollector Current -Continuous5-5A
PC *Collector Power Dissipation1.25W
RθJAThermal Resistance Junction to Ambient100℃/W
RθJcThermal Resistance Junction to Case8.33℃/W
TJJunction Temperature150
TstgStorage Temperature-55~+150

 

 


ELECTRICAL CHARACTERISTICS

 

Ta=25 Š unless otherwise specified

 

TIP122 NPN
ParameterSymbolTest conditionsMinMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=1mA,IE=0100 V
Collector-emitter breakdown voltageVCEO(SUS)IC=30mA,IB=0100 V
Collector cut-off currentICBOVCB=100V, IE=0 0.2mA
Collector cut-off currentICEOVCE=50 V, IB=0 0.5mA
Emitter cut-off currentIEBOVEB=5 V, IC=0 2mA

 

DC current gain

hFE(1)VCE= 3V, IC=0.5A1000  
hFE(2)VCE= 3V, IC=3 A100012000 

 

Collector-emitter saturation voltage

 

VCE(sat)

IC=3A,IB=12mA 2

 

V

IC=5 A,IB=20mA 4
Base-emitter voltageVBEVCE=3V, IC=3 A 2.5V
Output CapacitanceCobVCB=10V, IE=0,f=0.1MHz 200pF

 

 

TIP127 PNP
ParameterSymbolTest conditionsMinMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=-1mA,IE=0-100 V
Collector-emitter breakdown voltageVCEO(SUS)IC=-30mA,IB=0-100 V
Collector cut-off currentICBOVCB=-100V, IE=0 -0.2mA
Collector cut-off currentICEOVCE=-50 V, IB=0 -0.5mA
Emitter cut-off currentIEBOVEB=-5 V, IC=0 -2mA

 

DC current gain

hFE(1)VCE=-3V, IC=-0.5A1000  
hFE(2)VCE=-3V, IC=-3A100012000 

 

Collector-emitter saturation voltage

 

VCE(sat)

IC=-3A,IB=-12mA -2

 

V

IC=-5 A,IB=-20mA -4
Base-emitter voltageVBEVCE=-3V, IC=-3 A -2.5V
Output CapacitanceCobVCB=-10V, IE=0,f=0.1MHz 300pF

* This test is performed with no heat sink at Ta=25℃.

 

 

Typical Characteristics

 

 

 

 


TO-126 Package Outline Dimensions

 

 

 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A2.5002.9000.0980.114
A11.1001.5000.0430.059
b0.6600.8600.0260.034
b11.1701.3700.0460.054
c0.4500.6000.0180.024
D7.4007.8000.2910.307
E10.60011.0000.4170.433
e2.290 TYP0.090 TYP
e14.4804.6800.1760.184
h0.0000.3000.0000.012
L15.30015.7000.6020.618
L12.1002.3000.0830.091
P3.9004.1000.1540.161
Φ3.0003.2000.1180.126

 

 

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