Home Companies Reasunos Semiconductor Technology Co., Ltd.

400A/Cm2 High Power IGBT Practical For Photovoltaic Inverter

Reasunos Semiconductor Technology Co., Ltd.

Contact Us

[China] country

Trade Verify

Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

Contact name:Joan Tian

Inquir Now

Reasunos Semiconductor Technology Co., Ltd.

Verified Suppliers
  • Trust
    Seal
  • Verified
    Supplier
  • Credit
    Check
  • Capability
    Assessment

400A/Cm2 High Power IGBT Practical For Photovoltaic Inverter

Country/Region china
City & Province dongguan guangdong
Categories Inverters & Converters
InquireNow

Product Details

400A/c㎡ IGBT with Advantages Strictly Meeting Vehicle Specification Requirements

Product Description:

High Power IGBT is an advanced Gate Bipolar Transistor (IGBT) that provides high power, faster switching speed and higher current density. It is capable of handling high power applications like OBC, Charging Pile, Welding Machine, Switching Power Supply, Photovoltaic Inverter, and Energy Storage. It features a narrow mesa design, more optimized groove combination design, higher reliability design, and strict reference to the vehicle specification requirements. The advantages of this IGBT include faster switching speed, high current density of 400A/c㎡, higher power capability, and improved reliability.
 

Technical Parameters:

Device TypeAdvantages
IGBTNarrow Mesa Design, More Optimized Groove Combination Design, Higher Reliability Design, And Strict Reference To Vehicle Specification Requirements.
Switching SpeedProduct Name
Faster Switching SpeedHigh Power IGBT
ApplicationCurrent Density
OBC, Charging Pile, Welding Machine, Switching Power Supply, Photovoltaic Inverter, Energy Storage, Etc400A/c㎡
Application FrequencyPower
60KHzHigh Power
 

Applications:

High Power IGBT is a brand name REASUNOS Insulated Gate Bipolar Transistor (IGBT) device, which is made in Guangdong, China. It has a competitive price and comes in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The delivery time is usually 2-30 days, depending on the total quantity. The payment terms for this device is 100% T/T in Advance(EXW). The supply ability is 5KK/month. It is suitable for high voltage switch mode power supply and inverter system, motor drive system and other applications. With its high power, faster switching speed and current density of 400A/c㎡, it is suitable for 60KHz frequency operations.

 

Support and Services:

High Power IGBT Technical Support and Service

We provide comprehensive technical support and service for our High Power IGBT products.

  • We provide technical advice and guidance on how to select, install, and use our High Power IGBT products.
  • We offer comprehensive training on how to use our High Power IGBT products.
  • We provide technical support for our High Power IGBT products, including diagnostics, troubleshooting, and repair services.
  • We offer warranty and post-warranty service for our High Power IGBT products.

If you have any questions or concerns about our High Power IGBT products, please don’t hesitate to contact us.

 

Packing and Shipping:

Packaging and Shipping

High Power IGBT products are packaged and shipped with the following guidelines:

  • All products must be securely packed in a sturdy cardboard box.
  • The box must be clearly labeled with the customer's name, address, and contents of the shipment.
  • The box must be placed in an additional box for added protection during transit.
  • The package must be marked "Fragile" to alert handlers of its contents.
  • All shipments must be sent via a reliable courier service.
 

FAQ:

Q&A of the High Power IGBT
  • Q: What is the brand name of the High Power IGBT?

    A: The brand name of the High Power IGBT is REASUNOS.

  • Q: Where is the High Power IGBT made?

    A: The High Power IGBT is made in Guangdong, China.

  • Q: How is the High Power IGBT packaged?

    A: The High Power IGBT is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.

  • Q: What's the delivery time of the High Power IGBT?

    A: The delivery time of the High Power IGBT is 2-30 days, depending on the total quantity.

  • Q: What payment terms do you accept for the High Power IGBT?

    A: We accept 100% T/T in Advance(EXW) for the High Power IGBT.

Hot Products

High EAS Capability Low Voltage MOSFET Trench/SGT Structure Process Low Rds(ON) *, *::before, *:...
Low Power Loss Trench Process MOSFET with High EAS Capability and Smaller RSP *, *::before, *::after ...
Low Rds(ON) Trench Process Transistor for Motor Driver Application *, *::before, *::after {box...
Product Description: The Low Voltage MOSFET is a state-of-the-art semiconductor device, engineered ...
Product Description: The Low Voltage MOSFET is a state-of-the-art semiconductor device designed for ...
Product Description: The Low Voltage MOSFET is a cutting-edge semiconductor device designed for a ...