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CPC Molybdenum Copper Alloy Substrate For Glass Adapter Plate Microelectronic Packaging

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CPC Molybdenum Copper Alloy Substrate For Glass Adapter Plate Microelectronic Packaging

Country/Region china
City & Province baoji Shaanxi
Categories Steel Structures
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Product Details

Cu/MoCu30/Cu CPC Copper Molybdenum Copper Alloy Substrate

For Glass Adapter Plate Microelectronic Packaging

 

1. Information Of Cu/MoCu30/Cu CPC 1:4:1 Substrate For Microelectronic Packaging:

 

Copper has high thermal and electrical conductivity and is easy to process and form, so it has been widely used in the electronics industry. However, copper is soft and has a large thermal expansion coefficient, which limits its further application. Refractory metal steel has the characteristics of high strength, small coefficient of thermal expansion, and large modulus of elasticity. Therefore, copper and steel-copper are combined to give full play to their respective advantages to obtain special properties that cannot be possessed by a single metal, such as a designable thermal expansion coefficient and good electrical and thermal conductivity.

 

The molybdenum-copper composite material has low expansion coefficient and high thermal conductivity, and the expansion coefficient and thermal conductivity can be adjusted and controlled. Due to its outstanding advantages, the composite material has been widely used in large-scale integrated circuits and high-power microwave devices in recent years, especially for heat sinks and electronic packaging materials.

 

The copper-molybdenum-copper-copper composite board has excellent thermal conductivity and adjustable thermal expansion coefficient, and can match with Be0 and Al203 ceramics, so it is the preferred electronic packaging material for high-power electronic components.

 

 

2. Preparation Of Cu/MoCu30/Cu CPC 1:4:1 Substrate For Microelectronic Packaging:

 

It is characterized in that, comprising the following steps:

 

1), molybdenum-copper alloy plate electroplating, electroplating copper on the upper and lower sides of the molybdenum-copper alloy plate, the electroplating layer becomes granular to obtain a copper-plated molybdenum-copper alloy plate;


2), copper plate electroplating, electroplating copper on one side of the copper plate, the electroplating layer becomes granular, and obtains a copper-plated copper plate;


3), bonding, place the copper-plated copper plate with an area not smaller than the copper-plated molybdenum-copper alloy plate on both sides of the copper-plated molybdenum-copper alloy plate to form a first-class composite plate, the electroplated surface of the copper-plated copper plate and the copper-plated molybdenum-copper alloy plate The two electroplated surfaces are attached together;


4),hydraulic pressure, the first-level composite board is placed on the hydraulic press for hydraulic pressure, and the copper-plated copper board and the copper-plated molybdenum-copper alloy board are closely bonded together by hydraulic pressure to obtain the second-level composite board, and the pressure is 20MPa;


5),sintering, placing the secondary composite board after hydraulic pressure in an electric heating furnace for sintering, heating to 1060-1080° C. under an atmosphere protection state, and keeping it warm for 2 hours to obtain a third-stage composite board;


6), hot rolling, hot-rolling the third-level composite plate under the atmosphere protection state to obtain the fourth-level composite plate, the hot-rolling temperature is 750-850 ° C;


7),surface treatment, adopt belt polishing machine to remove the oxidation layer on the surface of the fourth grade composite board, obtain the fifth grade composite board;


8), cold rolling, cold-rolling the fifth-grade composite board, so that the fifth-grade composite board meets the thickness requirement, and obtains the sixth-grade composite board;


9), leveling, leveling the six-level composite board, and obtaining a finished copper-molybdenum-copper-copper composite board after leveling.

 

 

3. Parameter of Of Cu/MoCu30/Cu CPC 1:4:1 Substrate For Microelectronic Packaging:

 

Grade

Content

(Cu:Mo70Cu:Cu)

Density (g/cm3)Thermal expansion coefficient (10-6/k)
Cu-MoCu-Cu1411:4:19.57.3-10.0-8.5
Cu-MoCu-Cu2322:3:29.37.3-11.0-9.0
Cu-MoCu-Cu1111:1:19.2
  1. 5
Cu-MoCu-Cu2122:1:29.1
  1. 5

 

 

Size according to customer's drawing,we can process any shape of Cu/MoCu30/Cu sheet for microelectronic pakcaging.

 

 


 

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