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The INFINEON FS30R06W1E3 IGBT Module is a high-performance power semiconductor device that is designed to provide efficient and reliable operation in a variety of applications. This module comes in a 6-Pack configuration and features a low Collector-Emitter Saturation Voltage of 1.55 V, which helps to reduce power losses and improve overall efficiency. With a maximum Collector- Emitter Voltage VCEO rating of 600V and a Continuous Collector Current of 45 A at 25 C, this IGBT module is capable of handling high-power applications with ease.
The module is equipped with a Maximum Gate Emitter Voltage of 20 V, and a Gate-Emitter Leakage Current of 400 nA, ensuring safe and reliable operation even in extreme conditions. Additionally, the INFINEON FS30R06W1E3 IGBT Module has a Pd - Power Dissipation of 150 W, making it an excellent choice for high-power motor drives, renewable energy systems, and other applications that require reliable and efficient power management.
This IGBT module is part of the Trenchstop IGBT3 - E3 series and features Si technology. It comes in the EasyPACK package/case, which has dimensions of 62.8mm x 33.8mm x 12mm (L x W x H) and can be easily chassis mounted. The INFINEON FS30R06W1E3 IGBT Module is available in tray packaging and has a unit weight of 24 g.
