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Trench Silicon Carbide MOSFET IMW120R350M1H Integrated Circuit Chip TO-247-3

ShenZhen Mingjiada Electronics Co.,Ltd.

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Trench Silicon Carbide MOSFET IMW120R350M1H Integrated Circuit Chip TO-247-3

Country/Region china
City & Province shenzhen
Categories Refractory
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Product Details

Trench Silicon Carbide MOSFET IMW120R350M1H Integrated Circuit Chip TO-247-3​

 

Product Description Of IMW120R350M1H

IMW120R350M1H is 1200 V CoolSiC™ Trench Silicon Carbide MOSFETs in TO247-3 Package.

 

Specification Of IMW120R350M1H

Part NumberIMW120R350M1H
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
182 pF @ 800 V
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)


Features Of IMW120R350M1H

  • Best-in-class switching and conduction losses
  • Benchmark high threshold voltage, Vth > 4 V
  • 0 V turn-off gate voltage for simple and easy gate drive
  • Wide range of gate source voltages
  • Low loss and robust body diode for hard commutation
  • Switch-off losses independent of temperature

 

Other Supply Product Types

Part NumberPackage
DP83TD510ERHBRVQFN32
KSZ8775CLXCCLQFP80
ADIN2299BBCZBGA-196
SJA1105ELYLFBGA-159
88E1548-A1-BAM2C000TFBGA196
KSZ8842-16MVLILQFP128

 

FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

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