650V Transistors IMW65R057M1H N-Channel Silicon Carbide MOSFETs TO-247-3 Single FETs

650V Transistors IMW65R057M1H N-Channel Silicon Carbide MOSFETs TO-247-3 Single FETs​

Product Description Of IMW65R057M1H

IMW65R057M1H is 650 V 35A (Tc) 133W (Tc) N-Channel MOSFETs Transistors, Through Hole, Optimized switching behavior at higher currents.

Specification Of IMW65R057M1H

Features Of IMW65R057M1H

• Vds - Drain-Source Breakdown Voltage: 650 V
• Id - Continuous Drain Current: 35 A
• Rds On - Drain-Source Resistance: 74 mOhms
• Vgs - Gate-Source Voltage: - 5 V, + 23 V
• Vgs th - Gate-Source Threshold Voltage: 5.7 V

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FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.