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SIC Integrated Circuit Chip SCT1000N170AG HiP247 Silicon Carbide Power MOSFET
Product Description Of SCT1000N170AG
SCT1000N170AG This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
Specification Of SCT1000N170AG
Part Number: | SCT1000N170AG | Drain-Source Voltage: | 1700 V |
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Gate-Source Voltage: | -10 To 22 V | Drain Current (Continuous) At TC = 25 °C: | 7A |
Drain Current (Continuous) At TC = 100 °C: | 5A | Drain Current (Pulsed): | 20A |
Features Of SIC Integrated Circuit Chip
Applications Of SCT1000N170AG
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FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our
purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample
free?
A: Yes,we support sample order and small order.Sample cost is
different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also
use your suggested forwarder.Products will be in good packing and
ensure the safety and we are responsible to product damage to your
order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without
stock,we will confirm lead time for you based on your order
quantity.