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2 Inch To 4 Inch Ge Wafer To Micro Electronics And Opto Electronics Industry

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

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Address: No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China

Contact name:Daniel

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HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

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2 Inch To 4 Inch Ge Wafer To Micro Electronics And Opto Electronics Industry

Country/Region china
City & Province zhengzhou henan
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Product Details

Ge wafer to micro-electronics and opto-electronics industry in diameter range from 2 inch to 4 inch

 

We are a worldwide supplier of single crystal Ge wafer ( Germanium wafer ) and single crystal Ge ingot , we have a strong advantage in providing Ge wafer to micro-electronics and opto-electronics industry in diameter range from 2 inch to 4 inch . Ge wafer is an elemental and popular semiconductor material , due to its excellent crystallographic properties and unique electric properties , Ge wafer is widly used in Sensor , Solar cell and Infrared optics applications . We can provide low dislocation and epi ready Ge wafers to meet your unique germanium needs . Ge wafer is produced as per SEMI. standard and packed in standard cassette with vacuum sealed in clean room enviroment , with a good quality control system , We are dedicated to providing clean and high quality Ge wafer products . We can offer both electronics grade and IR grade Ge wafer , please contact us for more Ge product information

 

Single Crystal Germanium Wafer Capability

SWI can offer both electronics grade and IR grade Ge wafer and Ge ingot , please contact us for more Ge product information .
 

ConductivityDopantResistivity
( ohm-cm )
Wafer Size
NAUndoped>= 30Up to 4 inch
N typeSb0.001 ~ 30Up to 4 inch
P typeGa0.001 ~ 30Up to 4 inch

Applications:

Semiconductor device , Microelectronics , Sensor , Solar cell , IR optics.

 

Ge Wafer Properties

 
Chemical formulaGe
Crystal structureCubic
Lattice parametera=0.565754
Density ( g / cm3 )5.323
Thermal conductivity59.9
Melting point ( °C )937.4

 

Product Specification

 
GrowthCzochralski
DiameterØ 2" / Ø 3" / Ø 4"
Thickness500 um ~ 625 um
Orientation<100> / <111> / <110> or others
ConductivityP - type / N - type
DopantGallium / Antimony / Undoped
Resistivity0.001 ~ 30 ohm-cm
SurfaceSSP / DSP
TTV<= 10 um
Bow / Warp<= 40 um
GradeElectronics grade

 

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