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[China]
Trade Verify
Address: No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China
Contact name:Daniel
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD |
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Verified Suppliers
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Silicon Carbide (SiC) Trays or Plate
Silicon Carbide (SiC) Trays or plate used as a wafer holder for ICP etching process in LED industry.
Silicon carbide (SiC) is a has excellent thermal conductivity,
corrosion resistance, and with low thermal expansion. Silicon
carbide is an excellent material for sealing rings and bearings.
Silicon carbide trays have excellent corrosion resistance, great
wear resistance, great mechanical strength under high temperatures.
We supply many sizes of silicon carbide trays as well as other SiC
products.
Silicon Carbide Trays Properties
| Compound Formula | SiC |
| Molecular Weight | 40.1 |
| Appearance | Black |
| Melting Point | 2,730° C (4,946° F) (decomposes) |
| Density | 3.0 to 3.2 g/cm3 |
| Electrical Resistivity | 1 to 4 10x Ω-m |
| Poisson’s Ratio | 0.15 to 0.21 |
| Specific Heat | 670 to 1180 J/kg-K |
Silicon Carbide Tray Specifications
| Type | Recrystallized SiC | Sintered SiC | Reaction Bonded SiC |
| Purity of Silicon Carbide | 99.5% | 98% | >88% |
| Max. Working Temp. (`C) | 1650 | 1550 | 1300 |
| Bulk Density (g/cm3) | 2.7 | 3.1 | >3 |
| Appearance Porosity | <15% | 2.5 | 0.1 |
| Flexural strength (MPa) | 110 | 400 | 380 |
| Compressive strength (MPa) | >300 | 2200 | 2100 |
| Thermal expansion (10^-6/`C) | 4.6 (1200`C) | 4.0 (<500`C) | 4.4 (<500`C) |
| Thermal conductivity (W/m.K) | 35~36 | 110 | 65 |
| Main characteristics | High temp. High resistance. High purity | Fracture Toughness | Chemical Resistance |
Feature requirement:
Silicon Carbide Tray Applications
-Silicon carbide can be applied in areas such as semiconductor and
coating.
-Our silicon carbide trays are widely used in LED industry.
Packing of Silicon Carbide
Our Silicon Carbide Trays are carefully handled to minimize damage
during storage and transportation and to preserve the quality of
our products in their original condition.
