PSHI 512F45B

Symbol

Term

Values

Unit

V_{S MAX.}

Max. supply voltage primary

+16

V

I_{S MAX.}

Max. supply current primary

350

mA

P_DC/DC

Total power of DC/DC isolation power output

5

W

I_O

Max. logic signal output current

10

mA

I_outAV

Output average current per channel

140

mA

I_outPEAK

Output peak current per channel

±40

A

V_CES

IGBT collector-emitter voltage

4500

V

V_{isol IO}

Isolation voltage IN-OUT(1 minute. AC)

10

kV

R_{Gon/off min}

Minimal R_gon/R_goff

0.65

Ω

Q_out/pulse

Minimal charge per pulse

±60

μC

dv/dt

Rate of rise and fall of voltage

75

kV/μs

f_{SW max}

Max. working frequency

8

kHz

T_op

Operating temperature

-45...+85

℃

T_stg.

Storage temperature

-45...+85

℃

Symbol

Term

Parameter

Unit

Min.

Typ.

Max.

Rec.

V_S

Supply voltage primary

14.5

15

15.5

15

V

I_S

No-load current primary f_SW=0

f_SW=10kHz

110

125

mA

V_G(on)

Turn-on gate voltage

+15

V

V_G(off)

Turn-off gate voltage

-10

V

t_d(on)IO

IN-OUT turn-on delay time

500

ns

t_d(off)IO

IN-OUT turn-off delay time

500

ns

t_d(err)

Error correspond time

V_CEerror happen-block output

430

ns

t_md

Narrow pulse restrained

400

ns

t_pReset

Error automatic reset time

200

ms

t_p(err)

Error signal pulse width

200

ms

V_CEstat

Reference voltage for V_CEmonitoring

20

55

60

55

V

C_PS

Primary to secondary capacitance

8

pf