Active Member
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[China]
Address: 3418, Duhuixuan, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Contact name:段
Shenzhen Hongxinwei Technology Co., Ltd |
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FDS6679AZ MOSFET -30V P-Channel PowerTrench MOSFET This device is well suited for Power Management and load switching applications common in Notebook Computersand Portable Battery Packs
1.General Description
This P-Channel MOSFET is producted using ONSemiconductor’s advanced
PowerTrench process that has been especially tailored to minimize
the on-state resistance.
This device is well suited for Power Management and load switching
applications common in Notebook Computersand Portable Battery Packs
2.Features
Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6kV typical (note 3)
High performance trench technology for extremely lowrDS(on)
High power and current handing capability
RoHS Compliant
