Active Member
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[China]
Address: 3418, Duhuixuan, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Contact name:段
Shenzhen Hongxinwei Technology Co., Ltd |
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IRFR540ZTRPBF
1.Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Halogen-Free
2.Description
This HEXFET® Power MOSFET utilizes the latestprocessing techniques
to achieve extremely lowon-resistance per silicon area. Additional
featuresof this design are a 175°C junction operatingtemperature,
fast switching speed and improvedrepetitive avalanche rating. These
featurescombine to make this design an extremely efficientand
reliable device for use in a wide variety ofapplications.SDG
3.
4Why choose us?
100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service
