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IRF540NSTRLPBF 100V 33A HEXFE Power MOSFET Transistor

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DELI ELECTRONICS TECHNOLOGY CO.,LTD

IRF540NSTRLPBF 100V 33A HEXFE Power MOSFET Transistor

Country/Region	china
City & Province	shenzhen guangdong

Product Details

IRF540NSTRLPBF HEXFE Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality

Parameters in details:

Advanced HEXFET Power MOSFETs from

Packaging: the TO - 263
Type: N channel
Continuous drain current (ID) at 25°C: 33A
Drain-source voltage (VDSS) : 100V
Gate source threshold voltage: 4V @ 250uA
Leakage source on resistance: 44 MQ2@16A,10V
Maximum power dissipation: 130W

Feature

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

Description

Advanced HEXFETÆ Power MOSFETs from International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.

It provides the highest power capability and the lowest possible on resistance in any existing surface mount package.

The D2Pak is suitable for high current applications because of its low internal connection resistance

and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF540NL) is available for low profile applications.

Deli electronics tehcnology Co.,Ltd
Email:sales3@deli-ic.com
Skype:hkdeli881
Contact: VIVI-CHEN

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DELI ELECTRONICS TECHNOLOGY CO.,LTD

IRF540NSTRLPBF 100V 33A HEXFE Power MOSFET Transistor

Product Details

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