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[China]
Address: RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA
Contact name:VIVI
DELI ELECTRONICS TECHNOLOGY CO.,LTD |
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2MBI100N-060 IGBT Power Module 2-PACK IGBT 600V 100A
IGBT MODULE ( N series )
| Description | 1. IGBT is a functional integration of Power MOSFET and BJT devices in monolithic form |
| 2. IGBT combines the best attributes of both to achieve optimal device characteristics. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. | |
| 3. All componentsand interconnects are isolated from the heat sinking baseplate,offering simplified system assembly. | |
| Feature | 1). Square RBSOA |
| 2). Low Saturation Voltage | |
| 3). Overcurrent Limiting Function (~3 Times Rated Current) | |
| 4). IGBT is three-terminal power semiconductor device | |
| 5). High Frequency Operation | |
| Application | 1). AC Drive inverter |
| 2). Servo control | |
| 3). UPS, Uninterruptible Power Supply | |
| 4). Welding Power Supplies |
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings ( Tc=25°C)
Items Symbols Ratings Units
Collector-Emitter Voltage VCES 600V
Gate -Emitter Voltage VGES ± 20V
Continuous IC 100
Collector 1ms
IC PULSE 200
Current Continuous -IC 100 1ms
-IC PULSE 200
Max. Power Dissipation PC 400W
Operating Temperature Tj +150 °C
Storage Temperature Tstg -40∼ +125°C
Isolation VoltageA.C. 1min.Vis 2500V
Mounting *13.5
Terminals *13.5
Note: *1:Recommendable Value; 2.5∼ 3.5 Nm (M
Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
Skype:hkdeli881
Website:www.deli-ic.com
TEL:86-0755-82539981
