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IPD075N03LG Transistor N Channel Mosfet TO-252

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IPD075N03LG Transistor N Channel Mosfet TO-252

Country/Region china
City & Province shenzhen
Categories Electronic Accessories & Supplies
InquireNow

Product Details

ISO9001.pdf

IPD075N03LG is an N-channel MOSFET transistor. The following are the applications, conclusions, and parameters of this transistor:
Application:
Power switch and DC-DC converter
Motor driver
Automotive electronic equipment
Industrial automation control system
Conclusion:
Efficient N-channel MOSFET transistor
Low conduction resistance and leakage current
High temperature working ability
Low reverse leakage current
Parameters:
VDS (maximum drain source voltage): 30 V
ID (maximum drain current): 75 A
RDS (on): 5.5 m Ω
Qg (total gate charge): 180 nC
VGS (maximum gate source voltage): ± 20 V
Ciss (input capacitance): 3550 pF
Coss (output capacitance): 1120 pF
Crss (feedback capacitance): 180 pF
Tj (junction temperature): -55 to 175 ° C
Package: TO-252-3

Product Technical Specifications 
  
EU RoHSCompliant with Exemption
ECCN (US)EAR99
Part StatusActive
HTS8541.29.00.95
SVHCYes
SVHC Exceeds ThresholdYes
AutomotiveNo
PPAPNo
Product CategoryPower MOSFET
ConfigurationSingle
Process TechnologyOptiMOS
Channel ModeEnhancement
Channel TypeN
Number of Elements per Chip1
Maximum Drain Source Voltage (V)30
Maximum Gate Source Voltage (V)±20
Maximum Gate Threshold Voltage (V)2.2
Maximum Continuous Drain Current (A)50
Maximum Drain Source Resistance (mOhm)7.5@10V
Typical Gate Charge @ Vgs (nC)8.7@4.5V|18@10V
Typical Gate Charge @ 10V (nC)18
Typical Input Capacitance @ Vds (pF)1400@15V
Maximum Power Dissipation (mW)47000
Typical Fall Time (ns)2.8
Typical Rise Time (ns)3.6
Typical Turn-Off Delay Time (ns)17
Typical Turn-On Delay Time (ns)4.3
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)175
PackagingTape and Reel
MountingSurface Mount
Package Height2.3
Package Width6.22
Package Length6.5
PCB changed2
TabTab
Standard Package NameTO-252
Supplier PackageDPAK
Pin Count3

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