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Wireless Stereo Earphone Thin Film Pressure Sensors Terminal Connection

Henan Weiguo Intelligent Technology Co., Ltd.
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Address: No.169 Xuesong Road National High-tech District Zhengzhou Henan province

Contact name:Kingsley Ma

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Henan Weiguo Intelligent Technology Co., Ltd.

Wireless Stereo Earphone Thin Film Pressure Sensors Terminal Connection

Country/Region china
City & Province zhengzhou henan
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Product Details

 

To the world's leading headphone maker:product hot, subject to the deposit!
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Description

E2517 flexible film pressure sensor is a flexible pressure sensor product specially designed and developed by Suzhou Nengstar Electronics for TWS earphone. It can bring real pressure sensing function to TWS earphone.

The E2517 has high sensitivity and resolution, maintains linear output over a wide range, and can detect finger pressed micron deformation. In addition, E2517 can also be expanded to detect force value grading, force value change detection, multi-point detection, etc.

E2517 also has good flexibility and can be used for pressure detection of plane or curved structure, easily adapt to more complex structural conditions.


Advantage
Designed and developed for TWS earphone pressure sensing scheme; High sensitivity, can respond to pressure below 10GF; Flexible, bending resistance; Based on flexible nanomaterials, the response speed is fast; Long life, can withstand more than 1 million times of repeated press; Low power consumption (typical value: 0uA in standby mode) Sensor profile can be customized Sensor range parameters can be customized

 

Application
True Wireless Stereo Earphone Sensor

 

Performance Index
 

ModelE2517
thickness0.4mm
Range10~200gf
Appearance of sizeSee the chart
Response point<10gf
Response time<1ms
Recovery Time<15ms
Durability>100 million times(50% load, 1Hz test)
Repeatability±10%(%60 load)
Electromagnetic interference EMIDo not produce
Electrostatic discharge ESDNot sensitive
Test VoltageTypical Value DC-3.3V
Working Temperature-20ºC-60ºC
LinearityR2>0.980
Initial Resistance>10MΩ

Data reference 


 
     
 
 

       

 
 
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