prime 2" 3" 4" 6" 4h-Semi 4H-N Insulating Sic substrate Silicon
Carbide sic wafer
Silicon Carbide SiC crystal substrate wafer carborundum
SILICON CARBIDE MATERIAL PROPERTIES
| Product Name: | Silicon carbide (SiC) crystal substrate |
| Product Description: | 2-6inch |
| Technical parameters: | | Cell structure | Hexagonal | | Lattice constant | a = 3.08 Å c = 15.08 Å | | Priorities | ABCACB (6H) | | Growth method | MOCVD | | Direction | Growth axis or Partial (0001) 3.5 ° | | Polishing | Si surface polishing | | Bandgap | 2.93 eV (indirect) | | Conductivity type | N or seimi ,high purity | | Resistivity | 0.076 ohm-cm | | Permittivity | e (11) = e (22) = 9.66 e (33) = 10.33 | | Thermal conductivity @ 300K | 5 W / cm. K | | Hardness | 9.2 Mohs |
|
| Specifications: | 6H N-type 4H N-type semi-insulating dia2 "x0.33mm, dia2"
x0.43mm,dia2''x1mmt, 10x10mm, 10x5mm Single throw or double throw,
Ra <10A |
| Standard Packaging: | 1000 clean room, 100 clean bag or single box packaging |
Application of silicon carbide in power device industry
Performance Unit Silicon Si Silicon Carbide SiC Gallium Nitride GaN
Band gap eV
1.12
3.26 3.41
Breakdown electric field MV/cm 0.23 2.2 3.3
Electron mobility cm^2/Vs
1400 950 1500
Drift speed 10^7 cm/s
1 2.7 2.5
Thermal conductivity W/cmK
1.5 3.8 1.3
Compared with silicon (Si) devices, silicon carbide (SiC) power
devices can effectively achieve high efficiency, miniaturization
and light weight of power electronic systems. The energy loss of
silicon carbide power devices is only 50% of that of Si devices,
the heat generation is only 50% of that of silicon devices, and it
has a higher current density. At the same power level, the volume
of silicon carbide power modules is significantly smaller than that
of silicon power modules. Taking the intelligent power module IPM
as an example, using silicon carbide power devices, the module
volume can be reduced to 1/3 to 2/3 of silicon power modules.
There are 3 types of silicon carbide power diodes: Schottky diodes
(SBD), PIN diodes and junction barrier control Schottky diodes
(JBS). Due to the Schottky barrier, SBD has a lower junction
barrier height, so SBD has the advantage of low forward voltage.
The emergence of silicon carbide SBD increased the application
range of SBD from 250V to 1200V. At the same time, its high
temperature characteristics are good, from room temperature to
175°C limited by the shell, the reverse leakage current hardly
increases. In the application field of rectifiers above 3kV,
silicon carbide PiN and silicon carbide JBS diodes have attracted
attention due to their higher breakdown voltage, faster switching
speed, smaller volume and lighter weight than silicon rectifiers.
SiC crystal is an important wide-bandgap semiconductor material.
Because of its high thermal conductivity, high electron drift rate,
high breakdown field strength and stable physical and chemical
properties, it is widely used in high temperature, In high
frequency and high power electronic devices. There are more than
200 types of SiC crystals that have been discovered so far. Among
them, 4H- and 6H-SiC crystals have been commercially supplied. They
all belong to the 6mm point group and have a second-order nonlinear
optical effect. Semi-insulating SiC crystals are visible and
medium. The infrared band has a higher transmittance. Therefore,
optoelectronic devices based on SiC crystals are very suitable for
applications in extreme environments such as high temperature and
high pressure. Semi-insulating 4H-SiC crystal has been proved to be
a new type of mid-infrared nonlinear optical crystal. Compared with
commonly used mid-infrared nonlinear optical crystals, SiC crystal
has a wide band gap (3.2eV) due to the crystal. , High thermal
conductivity (490W/m·K) and large bond energy (5eV) between Si-C,
making SiC crystal have a high laser damage threshold. Therefore,
semi-insulating 4H-SiC crystal as a nonlinear frequency conversion
crystal has obvious advantages in outputting high-power
mid-infrared laser. Thus, in the field of high-power lasers, SiC
crystal is a nonlinear optical crystal with broad application
prospects. However, the current research based on the nonlinear
properties of SiC crystals and related applications is not yet
complete. This work takes the nonlinear optical properties of 4H-
and 6H-SiC crystals as the main research content, and aims to solve
some basic problems of SiC crystals in terms of nonlinear optical
properties, so as to promote the application of SiC crystals in the
field of nonlinear optics. A series of related work has been
carried out theoretically and experimentally. The main research
results are as follows: First, the basic nonlinear optical
properties of SiC crystals are studied. The variable temperature
refraction of 4H- and 6H-SiC crystals in the visible and
mid-infrared bands (404.7nm～2325.4nm) was tested, and the Sellmier
equation of variable temperature refractive index was fitted. The
single oscillator model theory was used to calculate the dispersion
of the thermo-optical coefficient. A theoretical explanation is
given; the influence of the thermo-optic effect on the phase
matching of 4H- and 6H-SiC crystals is studied. The results show
that the phase matching of 4H-SiC crystals is not affected by
temperature, while 6H-SiC crystals still cannot achieve temperature
phase matching. condition. In addition, the frequency doubling
factor of semi-insulating 4H-SiC crystal was tested by the Maker
fringe method. Second, the femtosecond optical parameter
generation and amplification performance of 4H-SiC crystal is
studied. The phase matching, group velocity matching, best
non-collinear angle and best crystal length of 4H-SiC crystal
pumped by 800nm femtosecond laser are theoretically analyzed.
Using the femtosecond laser with a wavelength of 800nm output by
the Ti:Sapphire laser as the pump source, using two-stage optical
parametric amplification technology, using a 3.1mm thick
semi-insulating 4H-SiC crystal as a nonlinear optical crystal,
under 90° phase matching, For the first time, a mid-infrared laser
with a center wavelength of 3750nm, a single pulse energy up to
17μJ, and a pulse width of 70fs was obtained experimentally. The
532nm femtosecond laser is used as the pump light, and the SiC
crystal is 90° phase-matched to generate signal light with an
output center wavelength of 603nm through optical parameters.
Third, the spectral broadening performance of semi-insulating
4H-SiC crystal as a nonlinear optical medium is studied. The
experimental results show that the half-maximum width of the
broadened spectrum increases with the crystal length and the laser
power density incident on the crystal. The linear increase can be
explained by the principle of self-phase modulation, which is
mainly caused by the difference of the refractive index of the
crystal with the intensity of the incident light. At the same time,
it is analyzed that in the femtosecond time scale, the nonlinear
refractive index of SiC crystal may be mainly attributed to the
bound electrons in the crystal and the free electrons in the
conduction band; and the z-scan technology is used to preliminarily
study the SiC crystal under 532nm laser. Non-linear absorption and
non-linear refractive index performance.
2. substrates size of standard
4 inch diameter Silicon Carbide (SiC) Substrate Specification |
| Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade |
| Diameter | 76.2 mm±0.3 mm or 100±0.5mm； |
| Thickness | 500±25um |
| Wafer Orientation | 0° off (0001)axis |
| Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤50 cm-2 |
| Resistivity | 4H-N | 0.015~0.028 Ω•cm |
| 6H-N | 0.02~0.1 Ω•cm |
| 4/6H-SI | ≥1E7 Ω·cm |
| Primary Flat and length | {10-10}±5.0° ,32.5 mm±2.0 mm |
| Secondary Flat Length | 18.0mm±2.0 mm |
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° |
| Edge exclusion | 3 mm |
| TTV/Bow /Warp | ≤15μm /≤25μm /≤40μm |
| Roughness | Polish Ra≤1 nm ,CMP Ra≤0.5 nm |
| Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm |
|
| Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% |
| Polytype Areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% |
| | | | |
Sic wafer ＆ ingots 2-6inch and other customized size
also can be provided.
3.Products detail display
Delivery ＆ Package
FAQ
- Q1. Is your company a factory or trade company?
-
- We are the factory and we also can do export ourself.
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- Q2.Is you company only work with sic business?
- yes; however we don‘t grow the sic crystal by self.
-
- Q3. Could you supply sample?
- Yes,we can supply sapphire sample according to customer's
requirement
-
- Q4. Do you have any stock of sic wafers ?
- we usually keep some standard size sic wafers from 2-6inch
wafers in stock
-
- Q5.Where is your company located.
- Our company located in shanghai ,China.
-
- Q6. How long will take to get the products.
- Generally it will take 3~4 weeks to process.It is depend on the and
the size of the products.
