Single Crystal Ultra Thin Sapphire Wafer , Sapphire Substrate 2 Inch 0.1mm Thickness

Material Sapphire(Al2O3)
Density(20°C) Kg/m3                 3.98×103
Crystal Structure                         hexagonal
Crystal lattice constant          a=4.785Å c=12.991 Å
Mohs hardness                            9
Melting Point                               2045°C
Boiling Point                                3000°C
Coefficient of Thermal Expansion    α=5.8×10 -6 /K
Specific heat                          0.418W.s/g/k
Thermal conductio                  25.12W/m/k(@100°C)
Refractive Index (nd)               no=1.768ne=1.76
dn/dt                                         13×10-6/K(@633nm)
Tranmission                            T≈85%(0.3~5um)
Permittivity                               11.5(//c), 9.3(⊥c)

OF Orientation flat: A axis±0.1° 
Frontside Surface Roughness:Ra＜0.3nm
Backside Surface Roughness: 0.8~1.2um 
( Or double side polished,  both side Ra＜0.2nm)
TTV:＜10um     BOW:-15~0um      WARP:＜10um
Laser Mark Series No. by needs
Package:Vacuum-sealed containers with nitrogen backfill in a class 100 environment

Sapphire Wafer Process Step

 
Sample